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Field Effect Transistors

Edited by P. Suveetha Dhanaselvam, K. Srinivasa Rao, Shiromani Balmukund Rahi, and Dharmendra Singh Yadav
Copyright: 2025   |   Expected Pub Date:2025//
ISBN: 9781394248476  |  Hardcover  |  
524 pages
Price: $225 USD
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One Line Description
Field Effect Transistors is an essential read for anyone interested in the future of electronics, as it provides a comprehensive yet accessible exploration of innovative semiconductor devices and their applications, making it a perfect resource for both beginners and seasoned professionals in the field.

Audience
Young researchers, students, academics, and industry professionals in the fields semiconductors, nanotechnology, microelectronics, and materials science

Description
Miniaturization has become the slogan of the electronics industry. Field Effect Transistors serves as a short encyclopedia for young minds looking for solutions in the miniaturization of semiconductor devices. It explores the characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law have been proposed and designed, a complete history of the existing and proposed semiconductor devices is not available. This book focuses on developments and research in emerging semiconductor FET devices and their applications and provides unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized semiconductor devices. Modern Field Effect Transistors is an easy-to-understand guide making it excellent for those who are new to the subject, giving insight and analysis of recent developments and developed semiconductor device structures along with their applications.

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Author / Editor Details
P. Suveetha Dhanaselvam, PhD is an associate professor in the Department of Electronics and Communication at the Velammal College of Engineering and Technology, Madurai, India with over 19 years of teaching experience. She has published papers in over 24 reputed journals and 53 international conferences, as well as two books, numerous book chapters, and a patent. Additionally, she serves as a reviewer for several journals and works on projects with the Indian Government’s Interdisciplinary Cyber Physical Systems Division of the Department of Science and Technology.

K. Srinivasa Rao, PhD is a professor and the head of the Microelectronics Research Group, Department of Electronics and Communication Engineering at the Koneru Lakshmaiah Education Foundation, Guntur, Andhra Pradesh, India. He also acts as a reviewer for several journals and universities’ graduate and post-graduate programs and is working on a project for the Indian government’s Science and Engineering Board. Additionally, he has published over 200 international research publications and presented over 65 international conference papers.

Shiromani Balmukund Rahi, PhD is an assistant professor in the School of Information and Communication Technology, Gautam Buddha University, Uttar Pradesh, India. He has successfully published 25 research papers, four conference proceedings, and 35 book chapters in addition to presenting his research in various international conferences and workshops. In addition to his original work, he has edited 10 books and received awards for his work as an editor for several international journals.

Dharmendra Singh Yadav, PhD is an assistant professor in the Department of Electronics and Communication Engineering at the National Institute of Technology, Kurukshetra, Haryana, India. He has published over 60 publications internationally in addition to several reputable books and book chapters. His current research interests include very large scale integration design, device modeling, and AI and machine learning in semiconductor devices and circuit-based applications in research.

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Table of Contents
Preface
1. Classical MOSFET Evolution: Foundations and Advantages
S. Amir Ghoreishi and Samira Pahlavani
1.1 Introduction of Classical MOSFET
1.1.1 The Advantages of MOSFET
1.2 Dual-Gate MOSFET
1.2.1 Advantage
1.2.1.1 Scalability
1.2.1.2 Improvement of Gain
1.2.1.3 Low-Power Consumption
1.2.1.4 Better ION/IOFF
1.2.1.5 Higher Switching Speed
1.2.2 Application
1.2.2.1 RF Mixer
1.2.2.2 RF Amplifier
1.2.2.3 Controllable Gain
1.3 Gate-All-Around MOSFET
1.3.1 The Fabrication Procedure of GAA MOSFETs
1.3.2 Advantage of Gate-All-Around MOSFETs
1.3.2.1 Excellent Performance
1.3.2.2 The Ability to Shrink
1.3.2.3 Adjustable Nanosheet
1.3.2.4 Monitoring the Channel by Gate
1.4 Id-Vg and Id-Vd Characteristics of Conventional MOSFETs
1.4.1 Introduction to Id-Vg Curves
1.4.2 Threshold Voltage and Saturation Region
1.4.2.1 Role of Threshold Voltage
1.4.2.2 Exploring the Saturation Region
1.5 Capacitance Characteristics of Conventional MOSFETs
1.5.1 The Role of Capacitance in MOSFET Behavior
1.5.2 CV Modeling of MOSFET Transistors
1.6 Frequency-Dependent Behavior
1.6.1 The Importance of Frequency-Dependent Analysis of MOSFET Transistors
1.6.2 Applications and Implications
1.6.2.1 RF Front-Ends
1.6.2.2 High-Speed Data Transmission
1.7 Conclusion
References
2. Marvels of Modern Semiconductor Field-Effect Transistors
S. Amir Ghoreishi, Mohsen Mahmoudysepehr and Zeinab Ramezani
2.1 Introduction
2.2 Tunnel Field-Effect Transistor
2.2.1 Tunneling Junction
2.3 Junctionless Transistors
2.3.1 Physics and Properties
2.4 GAA-FETs the Origin of Nanowire FETs and Nanosheet FETs
2.5 Significance in Modern Electronics
2.6 Main Electrical Characteristics of GAA-FETs
2.7 GAA-FET Classification
2.8 Nanowire Field-Effect Transistors (NW-FETs)
2.9 Nanosheet Field-Effect Transistors (NS-FETs)
2.10 Electrical Characteristics
2.11 Conclusion
References
3. Introduction to Modern FET Technologies
A. Babu Karuppiah and R. Rajaraja
3.1 Introduction
3.2 FinFETs (Fin Field-Effect Transistors)
3.2.1 The Evolution from Planar to FinFET
3.2.2 Unleashing the Power of FinFETs
3.2.3 Smaller Nodes, Greater Integration
3.2.4 Applications Across Industries
3.2.5 Challenges and Future Prospects
3.3 Unveiling Multi-Gate MOSFETs: A Symphony of Efficiency
3.3.1 Enter Multi-Gate MOSFETs
3.3.2 Three-Dimensional Mastery
3.3.3 Superior Switching Speeds
3.3.4 Power Efficiency on Point
3.3.5 Versatility Across Applications
3.3.6 The Future Landscape
3.4 Unveiling Nanoscale MOSFETs: The Miniaturization Marvel
3.4.1 Scaling Down to the Nanoscale
3.4.2 Quantum Tunneling and Beyond
3.4.3 FinFETs and Beyond
3.4.4 High-Performance Computing
3.4.5 Challenges and Innovations
3.4.6 The Future of Nanoscale MOSFETs
3.5 High–Electron Mobility Transistors (HEMTs): A Leap into the Future of FET Technology
3.5.1 The Essence of HEMTs
3.5.2 The Heterojunction Advantage
3.5.3 Applications Across Industries
3.5.4 Key Advantages of HEMTs
3.5.5 Future Prospects
3.6 Graphene Field-Effect Transistors (GFETs): Pioneering the Future of FET Technology
3.6.1 The Wonder of Graphene
3.6.2 The Structure of GFETs
3.6.3 Key Advantages of GFETs
3.6.4 Applications Across Industries
3.6.5 Challenges and Future Developments
3.7 Tunnel Field-Effect Transistors (TFETs): Navigating the Quantum Realm of Future Electronics
3.7.1 The Principle of Quantum Tunneling
3.7.2 How TFETs Work
3.7.3 Key Advantages of TFETs
3.7.4 Applications Across Industries
3.7.5 Challenges and Future Prospects
3.8 Silicon Carbide (SiC) MOSFETs: Transforming Power Electronics for a Greener Future
3.8.1 The Power of Silicon Carbide
3.8.2 Advantages of SiC MOSFETs
3.8.3 Applications Across Industries
3.8.4 Challenges and Future Developments
3.9 Power MOSFETs: Empowering the Future of High-Efficiency Power Electronics
3.9.1 The Basics of Power MOSFETs
3.9.2 Key Features of Power MOSFETs
3.9.3 Applications Across Industries
3.9.4 Challenges and Future Developments
3.10 Gallium Nitride (GaN) High–Electron Mobility Transistors (HEMTs): Unleashing the Power of Wide Bandgap Semiconductors
3.10.1 The Wonders of Wide Bandgap
3.10.2 Key Features of GaN HEMTs
3.10.3 Applications Across Industries
3.10.4 Challenges and Future Prospects
3.11 Organic Field-Effect Transistors (OFETs): Bridging the Gap to Flexible and Sustainable Electronics
3.11.1 The Organic Advantage
3.11.2 Key Features of OFETs
3.11.3 Applications Across Industries
3.11.4 Challenges and Future Directions
3.12 Conclusion
Bibliography
4. Scaling of Field-Effect Transistors
L. Vinoth Kumar, G. Pradeep Kumar and B. Karthikeyan
4.1 Introduction
4.2 Short-Channel Effect
4.3 FinFET Overview
4.3.1 History of Development
4.3.2 Difficulties and Challenges
4.4 GAAFET Overview
4.4.1 History of Development
4.4.2 Difficulties and Challenges
4.5 Conclusions
References
5. Future Prospective Beyond CMOS Technology Design
P. Suveetha Dhanaselvam, B. Karthikeyan and P. Anand
5.1 Introduction
5.2 Spintronics
5.2.1 Applications
5.3 Carbon Nanotube Transistors
5.4 Memristor
5.4.1 Working Principle
5.5 Applications
5.6 Quantum Dots
5.6.1 Operation and Applications
References
6. Nanowire Transistors
P. Suveetha Dhanaselvam, B. Karthikeyan, S. Nagarajan and B. Padmanaban
6.1 Introduction
6.2 Nanowire FETs
6.2.1 Device Design
6.3 Organic Nanowire Transistors
6.4 Conclusion
References
7. Advancement of Nanotechnology and NP-Based Biosensors
P. Anand and B. Muneeswari
7.1 Introduction
7.2 Metal Oxide–Based Biosensors
7.3 Zinc Oxide–Based Biosensor
7.3.1 0D Nanostructures (Zero-Dimensional)
7.3.2 1D Nanostructures (One-Dimensional)
7.3.3 2D Nanostructures (Two-Dimensional)
7.3.4 3D Nanostructures (Three-Dimensional)
7.4 AuNP-Based Biosensors
7.5 GR-Based Biosensors
References
8. Technology Behind Junctionless Semiconductor Devices
Pavani Kollamudi and K. Srinivasa Rao
8.1 Introduction
8.2 Operating Modes Based on the Structure of the Device
8.3 TCAD Simulations
8.4 Effect of Temperature
8.5 Results and Discussions
8.6 Conclusion
References
9. Breaking Barriers: Junctionless Metal-Oxide-Semiconductor Transistors Reinventing Semiconductor Technology
G. Vijayakumari, U. Rajasekaran, R. Praveenkumar, S. D. Vijayakumar and V. Kumar
9.1 Introduction
9.1.1 The Evolution of Semiconductor Technology
9.1.2 Fundamentals of MOS Transistors
9.1.2.1 Structure of a MOS Transistor
9.1.2.2 Operation of a MOS Transistor
9.1.3 Overview of Junctionless Metal-Oxide-Semiconductor Transistors
9.2 Junctionless MOS Transistors: Principles and Concepts
9.2.1 Structure of Junctionless Transistor
9.2.2 Junctionless Nanowire Transistor (JNT)
9.2.3 Bulk Planar Junctionless Transistor (BPJLT)
9.3 Fabrication Techniques for Junctionless Transistors
9.3.1 Characteristics of Junctionless Transistors
9.3.1.1 Gated Resistor Characteristics
9.3.1.2 Gated Resistor and Intrinsic Device Delay Time
9.3.1.3 Variation of a Doping Concentration in an n-Type Gated Resistor
9.3.1.4 Transfer Characteristics
9.3.2 Comparison of Junction and Junctionless Transistor
9.4 Real-World Implementations of Junctionless Transistors
9.4.1 Current Limitations and Obstacles
9.5 Conclusion
9.6 Applications
References
10. Performance Estimation of Junctionless Tunnel Field-Effect Transistor (JL-TFET): Device Structure and Simulation Through TCAD
Pradeep Kumar Kumawat, Shilpi Birla and Neha Singh
10.1 Introduction
10.1.1 Introduction to TFET
10.1.1.1 TFET Structure and Working
10.2 Junctionless TFETs
10.2.1 Motivation for Junctionless TFETs
10.2.2 Existing Structure of Junctionless TFET
10.3 Design Structure of Junctionless TFETs
10.3.1 Junctionless TFET Structure
10.4 Conclusion
References
11. Science and Technology of Tunnel Field-Effect Transistors
Zuber Rasool, Nuzhat Yousf, Aadil Anam and S. Intekhab Amin
11.1 Phenomenon of Quantum Tunneling
11.2 Tunneling Mathematics
11.2.1 Schrodinger’s Equation
11.2.2 Tunneling Through Rectangular Potential Barrier
11.2.3 WKB Approximation Model
11.2.4 Local Band-to-Band Tunneling Models
11.2.4.1 Kane’s Model
11.2.5 Non-Local Band-To-Band Tunneling Models
11.3 Tunnel Field-Effect Transistors (TFETs)
11.3.1 Limitations of MOSFET
11.3.2 Mechanism and Structure of TFET
11.3.3 Advantages and Limitations of TFET
11.3.4 Types of Tunneling
11.3.4.1 Point Tunneling
11.3.4.2 Line Tunneling
11.3.5 Methods of Enhancing Performance of TFETs
11.3.5.1 Doping Engineering
11.3.5.2 Geometry Engineering
11.3.5.3 Material and Band Engineering
11.3.5.4 Employing Techniques to Enhance TFET Performance
11.3.6 RF and Small Signal Analysis of TFETs
11.3.6.1 Small Signal Model of N-TFET in ON/OFF State
11.3.7 Applications of TFET Devices
11.4 Conclusion
References
12. Circuits Designed for Energy-Harvesting Applications That Leverage TFETs
to Achieve Extremely Low Power Consumption
Basudha Dewan
12.1 Introduction
12.1.1 The Roadmap for Technology Scaling
12.1.2 New Approaches for Upcoming Technology Generations
12.2 Energy Harvesting in an Era Beyond Moore’s Law
12.3 Tunnel Field-Effect Transistors (TFETs) as a Vital Technology for Energy Harvesting
12.4 Tunnel FET Technology: State of the Art
12.5 Band-to-Band Tunneling (BTBT) Current
12.6 MOSFET vs. TFET
12.7 Innovations in the Configurations of TFETs
12.8 Conclusion
References
13. A Ferroelectric Negative-Capacitance TFET with Extended Back Gate for Improvement in DC and Analog/HF Parameters
Anil Kumar Pathakamuri, Chandan Kumar Pandey, Diganta Das, Umakanta Nanda and Shiromani Balmukund Rahi
13.1 Introduction
13.2 Architectural Configuration and Simulation Approach
13.3 Results and Discussion
13.3.1 DC Characteristics
13.3.2 Optimization of Device Dimensions
13.3.3 Analog/RF Performance
13.3.4 Transient Behavior
13.4 Conclusion
References
14. Basic Concepts of Heterojunction Tunnel Field-Effect Transistors
P. Suveetha Dhanaselvam, B. Karthikeyan, K. Kavitha and P. Kavitha
14.1 Introduction
14.2 Boosting TFET ON Current
14.3 Heterojunction TFET
14.4 Various Heterojunction Structures
14.5 Conclusion
References
15. Boosting Performance of Charge Plasma–Based TFETs
Iman Chahardah Cherik, Saeed Mohammadi and Hadiseh Hosseinimanesh
15.1 Introduction
15.2 What is Charge Plasma Concept?
15.3 Techniques to Enhance the Performance of Dopingless TFETs
15.4 Materials Engineering
15.4.1 III/V Dopingless TFETs
15.4.2 Organic Materials
15.4.3 Ferroelectric Materials
15.4.4 Cladding Layer–Based Dopingless TFET
15.4.5 Dopingless TFETs Based on 2D Materials
15.5 Enhancement of the Electrostatic Control
15.5.1 Electrostatically Doped PNiN Dopingless TFET
15.5.2 Metal Implant Technique
15.5.3 Nanotube Dopingless TFET
15.6 Drawbacks of Dopingless TFET
15.6.1 Quantum Confinement
15.6.2 Defects at the Semiconductor-Oxide and Source-Channel Interface
15.6.3 Ambipolar Conduction
15.7 Benchmarking
15.8 Summary
Future Scope
References
16. TFET Device Modeling Using ML Algorithms
P. Vanitha, Paulvanna Nayaki Marimuthu, N. B. Balamurugan and M. Hemalatha
16.1 Introduction
16.2 Role of ML Algorithms in Device Modeling
16.2.1 Challenges in Device Modeling
16.2.2 Role of ML Algorithms
16.3 Simulation of Devices and ML Techniques
16.4 Dataset Generation
16.5 ML Workflow
16.6 Comparison of ML Algorithms
References
17. Design of Next-Generation Field-Effect Transistors Using Machine Learning
K. Girija Sravani, M. Srikanth, Manikanta Sirigineedi and Padma Bellapukonda
17.1 Introduction
17.2 Description
17.2.1 Extensive Dataset Development
17.2.2 Design Elements and Feature Engineering
17.2.3 Applications of Multi-Functional ML Models
17.2.4 Thorough Assessment and Validation
17.2.5 Making the Most of the FET Design Space
17.2.6 Advancements in Manufacturing and Their Integration
17.2.7 An Adaptive Framework for Design
17.3 Optimizing FET Performance through Machine Learning
17.4 Enhancing Predictive Accuracy and Robustness
17.5 Integrating ML-Optimized FET Structures with Manufacturing Advances
17.6 Conclusion
Bibliography
18. Machine Learning–Augmented Blockchain-Based Graphene Field-Effect
Transistor Sensor Platform for Biomarker Detection
K. Srinivasa Rao, M. Srikanth, J.M.S.V. Ravi Kumar and Bhanurangarao M.
18.1 Introduction
18.2 Description
18.2.1 Gather Patient Information, Such as Identifying Details, Biomarkers, and GFET Sensor Readings, and Prepare the Data for Analysis
18.2.2 Enhancing Biomarker Detection Precision With GFET Sensors and Machine Learning
18.2.3 Accelerating Biomarker Detection with Machine Learning and GFET Sensors
18.2.4 Securing Biomarker Data: Blockchain Role in Ensuring Transparency and Immutability
18.2.5 Multidisciplinary Applications of the Biomarker Detection Platform
18.3 Conclusion
Bibliography
19. Heterojunction Concept and Technology for FET Developments
Shashank Kumar Dubey, Soumak Nandi, Kondaveeti Girija Sravani, Sandip Swarnakar, Mukesh Kumar and Aminul Islam
19.1 Introduction
19.2 Concept of Heterojunction
19.3 Heterojunction Field-Effect Transistors (HFETs): An Advanced FET
19.3.1 Selection of Materials for the Development of HFET or HEMT
19.4 GaAs-Based HEMTs
19.5 InP-Based HEMTs
19.6 GaN-Based HEMTs and its Applications
19.6.1 AlGaN/GaN-Based HEMT Structure and Working Principle
19.6.2 Polarization in AlGaN/GaN-Based HEMT
19.6.3 2-DEG Formation in AlGaN/GaN-Based HEMT
19.6.4 Process Flow of GaN HEMT
19.6.5 Impact of Aluminium (Al) Content in AlGaN Supply Layer on AlGaN/GaN-Based HEMT Performance
19.6.6 Why GaN-Based HEMTs are Used for an Amplifier Application?
19.7 SoC Applications and Future Scope of GaN HEMT
19.8 Conclusion
References
20. Characteristic Analysis of GOS HTFET
B. V. V. Satyanarayana, T. S. S. Phani, A. K. C. Varma, G. Prasanna Kumar, M. V. Ganeswara Rao and Prudhvi Raj Budumuru
20.1 Introduction
20.1.1 Need of HTFETs in Ultralow-Power Design
20.2 Design Considerations of GOS HTFET
20.2.1 GOS Technique
20.2.2 Energy Band Diagrams
20.2.3 Subthreshold Swing Operation
20.2.4 Low-Bandgap (LBG) Materials
20.2.5 High-k Gate Dielectric Materials
20.3 Device Physics and Structures of GOS HTFETs
20.3.1 Device Parameters
20.3.2 Conventional Design of HTFET
20.3.3 Design of GOS-HTFET
20.3.4 Features of GOS HTFET
20.4 Model of GOS HTFET
20.4.1 Concept of Device Modeling
20.4.2 Surface Potential Model
20.5 Simulation and Validation of GOS HTFET
20.5.1 2D Simulation Model
20.5.2 3D Simulation Model
20.6 Characteristics of GOS HTFET
20.6.1 V-I and Transfer Characteristics
20.6.1.1 GOS HTFET Transfer Characteristics
20.6.1.2 GOS HTFET Drain Characteristics
20.6.2 C-V Characteristics and Capacitance Model
20.6.3 Subthreshold Swing
20.6.4 ON-OFF Current Ratio
20.7 Limitations of GOS HTFET
20.8 Application of GOS HTFET in SRAM Design
20.9 Conclusions
References
21. A Charge-Based 2D Mathematical Model for Dual-Material Gate Fe-Doped
AlGaN/AlN/GaN High–Electron Mobility Transistors
N. B. Balamurugan, M. Hemalatha, M. Suguna and D. Sriram Kumar
21.1 Introduction
21.2 Device Structure and Description
21.3 Mathematical Formulation
21.3.1 Polarization Charge and Bandgap Calculation
21.3.2 Sheet Charge Density Model
21.3.2.1 Region 1: (Ef < E0)
21.3.2.2 Region II (E0 < Ef < ΔEc )
21.3.2.3 Region III (Ef > ΔEc )
21.3.2.4 Unified Sheet Charge Density Model
21.3.3 Mobility Model
21.3.4 Drain Current Model
21.3.5 Transconductance Model
21.3.6 Gate Capacitance Model
21.3.7 Cutoff Frequency Model
21.4 Summary
References
22. Exploring Vertical Transition Metal Dichalcogenide Heterostructure MOSFET: A Comprehensive Review
Malu U., Charles Pravin J. and Sandeep V.
22.1 Introduction
22.1.1 2D Materials
22.2 Transition Metal Dichalogenides (TMDs)
22.2.1 Different Types of Transition Metal Dichalogenides
22.2.2 Synthesis
22.2.3 TMD Phase Transition
22.2.4 Characterization and Properties
22.3 Heterostructure Transition Metal Dichalcogenides
22.3.1 Heterostructure MOSFET
22.3.2 Vertical Heterostructure MOSFET
22.4 Some of the TMD-Related Materials
22.4.1 Molybdenum Disulfide (MoS2)
22.4.2 Molybdenum Ditelluride (MoTe2)
22.4.3 WTe2
22.4.4 Molybdenum Diselenide (MoSe2)
22.4.5 Mercury Cadmium Telluride (HgCdTe)
22.5 Other Properties
22.6 Conclusion
References
23. Two-Dimensional Materials and Devices for UV Detection
Penchalaiah Palla, Akbar Basha Dhu-al Shaik, David Jenkins and Srinivasa Rao K.
23.1 Part 1: Introduction to 2D Materials and UV Detectors
23.1.1 Photodetectors for Ultraviolet Radiation Detection
23.1.2 2D Materials for High-Performance Ultraviolet Detectors
23.1.2.1 One-Atom-Thick 2D Material: Graphene
23.1.2.2 High–Radiation Absorption TMDs and TMCs
23.1.2.3 Wide-Bandgap Materials: Oxides
23.1.2.4 2D Insulating Hexagonal Boron Nitride
23.1.2.5 Wide-Bandgap Organic 2D Materials
23.1.3 2D Material Applications: UV Detectors
23.2 Part 2: Recent Developments in 2D Material–Based UV Detectors
23.2.1 Graphene/Bulk Semiconductor Heterostructure Devices
23.2.2 h-BN as an Insulating Substrate
23.2.3 High–UV Absorption ZnO Quantum Dots
23.3 Summary
References
24. Negative-Capacitance Field-Effect Transistor for Optimization of Power Factor for Modern Applications
Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Hanumant Lal and Srinivasa Rao Karumuri
24.1 Introduction
24.2 Requirement of Low-Power MOSFET
24.3 Challenges in Classical MOS Devices
24.4 Negative Capacitance: Low-Power Device
24.5 Fundamental of Negative-Capacitance Technology
24.6 Negative-Capacitance Transistors
24.7 Fundamental Approach for Low-Power Circuit Design
24.8 Future Scope
24.9 Conclusion
References
25. Nanoscale High-K Tri-Material Surrounding-Gate MOSFET—An Insight Analysis
P. Suveetha Dhanaselvam, S. Vasuki, B. Karthikeyan and D. Sriram Kumar
25.1 Introduction
25.2 Proposed Structure
25.3 Analytical Model
25.3.1 Surface Potential
25.3.2 Electric Field
25.3.3 Subthreshold Current
25.4 Conclusion
References
26. Nanoscale Field-Effect Transistors (FETs) in RF Applications
Rajeswari P., Gobinath A., Suresh Kumar N. and Anandan M.
26.1 Introduction
26.1.1 Nanoscale FETs
26.1.2 RF Applications of Nanoscale FETs
26.2 Fundamental Principles and Operating Characteristics of FETs
26.3 Scaling Challenges in Nanoscale FETs for RF Applications
26.3.1 Basic Principles of FETs and Scaling
26.3.1.1 Miniaturization Effects
26.3.1.2 Gate Leakage
26.3.2 Quantum Effects in Small-Scale Devices
26.3.2.1 Quantum Confinement
26.3.2.2 Electron Mobility
26.3.3 Material Challenges
26.3.3.1 Material Limitations
26.3.3.2 Manufacturing Precision
26.3.4 Reliability Concerns
26.3.4.1 Aging and Wear
26.3.4.2 Variability
26.4 Exploring the Landscape: Field-Effect Transistors (FETs) in Radiofrequency (RF) Applications
26.5 Conclusion
References
27. Emerging Subthreshold Swing FET for Next-Generation Technology Nodes
G. Lakshmi Priya, T. Ranjith Kumar, G. Gifta, A. Andrew Roobert and M. Venkatesh
27.1 Introduction
27.2 Fundamental Challenges with Conventional FET Device
27.2.1 Scaling
27.2.1.1 Problems with the Scaling of the Gate Oxide
27.2.1.2 Short-Channel Effects (SCEs)
27.3 Developed Emerging Subthreshold Swing FET and its Working Principle
27.3.1 Tunnel FET (TFET)
27.3.2 Junctionless Transistor (JLT)
27.3.3 Silicon Nanowire Transistor (SNW)
27.3.4 Carbon Nanotubes Transistor (CNT)
27.4 Limitations of Emerging Subthreshold Swing FET
27.5 Techniques to Overcome the Limitations of Emerging Subthreshold Swing FET
27.5.1 Gate Metal Engineering
27.5.2 Multiple Gate Architecture
27.5.3 Gate Oxide Engineering
27.5.3.1 Stacked Gate-Oxide Structure
27.6 Conclusion
References
28. Elucidation of the Impact of Nano Heat Transfer Variability on Three-Dimensional Field-Effect Transistors
Faouzi Nasri, Husien Salama, Billel Smaani and Khalifa Ahmed Salama
28.1 Introduction
28.1.1 Background of Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET
28.1.2 IDS-VGS MOSFET Characteristics and IDS-VDS MOSFET Characteristics
28.1.3 The FinFET Layout
28.2 Mathematical Formulation and Structural Analysis
28.2.1 Structural Analysis: FinFET and SG-FET Devices
28.2.2 Mathematical Approaches
28.3 Results and Discussion
28.4 Conclusion
References
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