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Submit a ProposalFeFET Devices, Trends, Technology, and Applications
One Line Description
FeFET Devices, Trends, Technology and Applications is essential for anyone seeking an in-depth understanding of the latest advancements in ferroelectric devices, as it offers comprehensive insights into research techniques, novel materials, and the historical context of semiconductor development.
Audience
Researchers, students, educators, and industry professionals working with FeFETs, semiconductor design, device modelling, the semiconductor industry, gate engineering, nanotechnology, microelectronics, and material science
Researchers, students, educators, and industry professionals working with FeFETs, semiconductor design, device modelling, the semiconductor industry, gate engineering, nanotechnology, microelectronics, and material science
Description
FeFET Devices, Trends, Technology and Applications serves as an encyclopedia of knowledge for state-of-the-art research techniques for the miniaturization of ferroelectric devices. This volume explores characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law and More-Moore are proposed, a complete history of existing and proposed semiconductor devices is now available here. This resource focuses on developments and research in emerging ferroelectric FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized ferroelectric devices.
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FeFET Devices, Trends, Technology and Applications serves as an encyclopedia of knowledge for state-of-the-art research techniques for the miniaturization of ferroelectric devices. This volume explores characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law and More-Moore are proposed, a complete history of existing and proposed semiconductor devices is now available here. This resource focuses on developments and research in emerging ferroelectric FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized ferroelectric devices.
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Author / Editor Details
Balwinder Raj, PhD is an associate professor at the National Institute of Technology, Jalandhar, India. He has authored and co-authored five books, 12 book chapters, and over 100 research papers in peer-reviewed national and international journals and conferences. His areas of interest include nanoscale semiconductor device modeling, nanoelectronics and their applications in hardware security, sensors, and circuit design, FinFET-based memory design, low-power very large-scale integrated design, and field programmable gate array implementation.
Balwinder Raj, PhD is an associate professor at the National Institute of Technology, Jalandhar, India. He has authored and co-authored five books, 12 book chapters, and over 100 research papers in peer-reviewed national and international journals and conferences. His areas of interest include nanoscale semiconductor device modeling, nanoelectronics and their applications in hardware security, sensors, and circuit design, FinFET-based memory design, low-power very large-scale integrated design, and field programmable gate array implementation.
Shiromani Balmukund Rahi, PhD, is an assistant professor at University School of Information and Communication Technology (SoICT) Gautam Buddha University Greater Noida, Uttar Pradesh, India. He has successfully published 25 international research publications, four conference proceedings and 35 book chapters, in addition to presenting his research at various international conferences and workshops. In addition to his original work, he has edited 11 books and received awards for his work as an editor and reviewer for several international journals. He has also worked as post-doctoral researcher in Korea Military Academy Seoul, Republic of Korea. He also serves as a reviewer for various national and international journals, conferences, and workshops. His research interests include semiconductor device modeling and simulation, tunnel FETs, NCFETs, and Nanosheet FETs.
Nandakishor Yadav, PhD is a senior scientist with the Fraunhofer Institute for Photonic Microsystems, Dresden, Germany with over ten years of research and teaching experience. He has published over 50 research articles in peer-reviewed journals and conferences. His research interests include very large-scale interface design, Ferroelectric memory, and peripheral circuit design.
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Table of Contents
Preface
Acknowledgements
1. Scaling and Challenge of Si-Based CMOS: Past, Present, and Future
Shiromani Balmukund Rahi and Young Suh Song
1.1 Introduction to Si-Based CMOS Technology
1.2 Basic Concept of Transistor Scaling
1.3 Past Challenges in Scaling Si-Based CMOS
1.4 Present Challenges and Limitations of Si-Based CMOS
1.5 Representative Methods for Scaling MOSFET
1.6 Future Prospects and Innovations in Si-Based CMOS Technology
1.7 Navigating the Evolution of Si-Based CMOS Technology
1.8 The Future of Transistors: 2D FET
1.9 Conclusion
Acknowledgment
References
2. Ferroelectric Polymer-Based Field-Effect Transistor (FeFET) and its Applications
Dhrubojyoti Roy, Mohua Chakraborty, Dipankar Bandyopadhyay and Partho Sarathi Gooh Pattader
2.1 Introduction
2.2 Fabrication of Gate Dielectric Layer and FeFET
2.3 Working of FeFET
2.4 Applications of FeFET Device
2.5 Summary
Acknowledgments
References
3. Ferroelectric Applications in Novel Devices
Keshav Kumar and Umesh Chandra Bind
3.1 Introduction
3.2 General Concepts of Ferroelectrics
3.3 Ferroelectric Materials Processing for Device Applications
3.3.1 Bulk Synthesis
3.3.1.1 Solid State Reaction Method
3.3.1.2 Coprecipitation Method
3.3.1.3 Sol–Gel Method
3.3.2 Thin Films
3.3.2.1 Chemical Vapor Deposition (CVD)
3.3.2.2 Sputtering Method
3.3.2.3 Pulsed Laser Deposition (PLD) Technique
3.3.2.4 Molecular Beam Epitaxy (MBE)
3.4 Advanced Application of Ferroelectric Materials
3.4.1 Memory Devices
3.4.2 Energy Harvester
3.4.3 Space Flight/Satellite Electronics and Other Applications
3.5 Summary and Outlook
References
4. Optimization of Hetero Buried Oxide Ferro TFET and Its Analysis
Sirisha Meriga and Brinda Bhowmick
4.1 Introduction
4.2 Mechanism of the Device and Method of Simulation
4.3 Results and Discussions
4.3.1 The Fundamental Nature of Polarization
4.3.2 DC Analysis
4.3.3 Analog/RF Performance
4.4 Conclusion
4.4.1 Summary
References
5. Ferroelectric Material-Based Field Effect Transistor and Its Applications
Avinash Kumar and Balwinder Raj
5.1 Introduction
5.1.1 What is Ferroelectricity?
5.1.2 Effects of Temperature on Ferroelectricity
5.2 Ferroelectric Material Properties and Advantages
5.2.1 Common Materials for Ferroelectrics
5.3 Ferroelectricity in Nanoelectronics
5.3.1 HfO2-Based Ferroelectrics in Nanodevices
5.3.2 2D Ferroelectric Nanomaterials
5.4 Structures of Ferroelectric FET
5.4.1 Metal Ferroelectric Semiconductor Field-Effect Transistor
5.4.2 Metal Ferroelectric Insulator Semiconductor Field-Effect Transistor
5.4.3 Metal Ferroelectric Metal Insulator Semiconductor Field-Effect Transistor
5.4.4 Dual Gate FeFET
5.4.5 Fin FET
5.4.6 Gate All-Around Structure
5.5 Applications
5.5.1 Fe-FET-Based Memory Design
5.5.2 Fe-FET-Based Sensor Design
5.6 Conclusion
5.7 Future Prospects for Nanoferroelectric Devices
Acknowledgments
References
6. Ferroelectric Tunnel FET: Next Generation of Classical Low Power CMOS Technology
Naima Guenifi, Shiromani Balmukund Rahi, Houda Chabane and Khadidja Dibi
6.1 Introduction
6.2 Implementation of Ferroelectric Material in Tunnel FET
6.2.1 Device Structure
6.2.2 Device Lay-Out Information of Fe Tunnel
6.3 Results and Analysis
6.4 Conclusion
References
7. Identification of Negative Capacitance in Ferroelectric in FET Devices
Umesh Chandra Bind, Shiromani Balmukund Rahi and Keshav Kumar
7.1 Introduction
7.2 Negative Capacitance
7.3 NC in Ferroelectrics
7.4 Ferroelectric Materials in Practice for NC
7.4.1 Traditional Ferroelectric
7.4.2 Hafnium and Zirconium-Based Ferroelectric
7.4.3 Wurtzite Aluminum Scandium Nitride
7.5 Evidence of NC in Ferroelectrics
7.5.1 For the Concept of NC
7.5.2 For Device Fabrication
7.6 Perspectives
7.7 Conclusion
References
8. Tunnel Field Effect Transistors and Their Application in Biosensors
K. Manikanta, Umakanta Nanda, Pratikhya Raut and Biswajit Jena
8.1 Introduction
8.2 What is Biosensor: Types and its Principle
8.3 Components of Biosensors
8.4 Application of FET in Biosensors
8.5 How TFET Works as a Biosensor and its Structure
8.6 Recent Structures of TFET-Based Bio-Sensors
8.7 Conclusion
References
9. Transparent Conducting Oxides: Introduction, Types, Deposition Techniques and Applications
Isha Arora and Rishi Kant
9.1 Introduction
9.2 Physical Characteristics of TCOs
9.2.1 Optical Properties
9.2.2 Electrical Properties
9.3 Types of Transparent Conductors
9.4 Deposition Techniques
9.5 Sol–Gel Deposition
9.6 Applications of TCOs
9.7 Conclusion
References
10. Ferroelectric and FeFET Devices as Biosensors: Principle, Mechanisms and Applications in Health, Environmental, and Agricultural Monitoring
Umesh Chandra Bind, Keshav Kumar, Vimala Bind, Ajay Kumar and Jyoti Nishad
10.1 Introduction
10.2 Biosensors
10.3 Characteristics of Biosensors
10.4 Interaction Mechanism of Ferroelectric with Physical Stimuli
10.5 Working Principle of Biosensors
10.6 Biosensing Mechanism of Ferroelectrics
10.7 Ferroelectrics for Biosensing
10.8 Ferroelectrics in Health Monitoring
10.9 Ferroelectrics for Environmental Monitoring
10.10 Ferroelectrics for Agricultural Monitoring
10.11 FeFET Biosensors for Monitoring
10.12 Perspective
10.13 Conclusions
References
11. Ferroelectric Application in Recent Nanoscale Device with ITRS Roadmap
Shiromani Balmukund Rahi and Young Suh Song
11.1 Introduction to Ferroelectric Application
11.2 Ferroelectric Materials and Properties
11.3 Basic Scaling and ITRS Roadmap
11.4 Nanoscale Devices: Ultra-Thin-Body MOSFET, Gate-All-Around MOSFET, Gate, Channel, Source/Drain Engineering, Local High Doping for Better Subthreshold Swing
11.5 Nanoscale Devices with Ferroelectric Applications
11.6 Advantages and Potential Applications of Ferroelectric Materials
11.7 Positioning of Ferroelectric Technologies in the ITRS Roadmap
11.8 Possible Challenge in Future Ferroelectric Applications
11.9 Conclusion
References
12. Recent Electron Mobility Models for FeFET
Shiromani Balmukund Rahi and Young Suh Song
12.1 Introduction to Electron Mobility and FeFET
12.2 Classical Electron Mobility Models
12.3 Quantum Mechanical Models for Electron Mobility
12.4 Density Functional Theory (DFT) Approaches for Electron Mobility
12.5 Empirical Electron Mobility Models and Parameter Extraction Techniques
12.6 Challenges and Limitations in Modeling FeFET Electron Mobility
12.7 Future Directions and Emerging Trends in FeFET Electron Mobility Modeling
12.8 Conclusion
References
About the Editors
Index
Back to Top
Preface
Acknowledgements
1. Scaling and Challenge of Si-Based CMOS: Past, Present, and Future
Shiromani Balmukund Rahi and Young Suh Song
1.1 Introduction to Si-Based CMOS Technology
1.2 Basic Concept of Transistor Scaling
1.3 Past Challenges in Scaling Si-Based CMOS
1.4 Present Challenges and Limitations of Si-Based CMOS
1.5 Representative Methods for Scaling MOSFET
1.6 Future Prospects and Innovations in Si-Based CMOS Technology
1.7 Navigating the Evolution of Si-Based CMOS Technology
1.8 The Future of Transistors: 2D FET
1.9 Conclusion
Acknowledgment
References
2. Ferroelectric Polymer-Based Field-Effect Transistor (FeFET) and its Applications
Dhrubojyoti Roy, Mohua Chakraborty, Dipankar Bandyopadhyay and Partho Sarathi Gooh Pattader
2.1 Introduction
2.2 Fabrication of Gate Dielectric Layer and FeFET
2.3 Working of FeFET
2.4 Applications of FeFET Device
2.5 Summary
Acknowledgments
References
3. Ferroelectric Applications in Novel Devices
Keshav Kumar and Umesh Chandra Bind
3.1 Introduction
3.2 General Concepts of Ferroelectrics
3.3 Ferroelectric Materials Processing for Device Applications
3.3.1 Bulk Synthesis
3.3.1.1 Solid State Reaction Method
3.3.1.2 Coprecipitation Method
3.3.1.3 Sol–Gel Method
3.3.2 Thin Films
3.3.2.1 Chemical Vapor Deposition (CVD)
3.3.2.2 Sputtering Method
3.3.2.3 Pulsed Laser Deposition (PLD) Technique
3.3.2.4 Molecular Beam Epitaxy (MBE)
3.4 Advanced Application of Ferroelectric Materials
3.4.1 Memory Devices
3.4.2 Energy Harvester
3.4.3 Space Flight/Satellite Electronics and Other Applications
3.5 Summary and Outlook
References
4. Optimization of Hetero Buried Oxide Ferro TFET and Its Analysis
Sirisha Meriga and Brinda Bhowmick
4.1 Introduction
4.2 Mechanism of the Device and Method of Simulation
4.3 Results and Discussions
4.3.1 The Fundamental Nature of Polarization
4.3.2 DC Analysis
4.3.3 Analog/RF Performance
4.4 Conclusion
4.4.1 Summary
References
5. Ferroelectric Material-Based Field Effect Transistor and Its Applications
Avinash Kumar and Balwinder Raj
5.1 Introduction
5.1.1 What is Ferroelectricity?
5.1.2 Effects of Temperature on Ferroelectricity
5.2 Ferroelectric Material Properties and Advantages
5.2.1 Common Materials for Ferroelectrics
5.3 Ferroelectricity in Nanoelectronics
5.3.1 HfO2-Based Ferroelectrics in Nanodevices
5.3.2 2D Ferroelectric Nanomaterials
5.4 Structures of Ferroelectric FET
5.4.1 Metal Ferroelectric Semiconductor Field-Effect Transistor
5.4.2 Metal Ferroelectric Insulator Semiconductor Field-Effect Transistor
5.4.3 Metal Ferroelectric Metal Insulator Semiconductor Field-Effect Transistor
5.4.4 Dual Gate FeFET
5.4.5 Fin FET
5.4.6 Gate All-Around Structure
5.5 Applications
5.5.1 Fe-FET-Based Memory Design
5.5.2 Fe-FET-Based Sensor Design
5.6 Conclusion
5.7 Future Prospects for Nanoferroelectric Devices
Acknowledgments
References
6. Ferroelectric Tunnel FET: Next Generation of Classical Low Power CMOS Technology
Naima Guenifi, Shiromani Balmukund Rahi, Houda Chabane and Khadidja Dibi
6.1 Introduction
6.2 Implementation of Ferroelectric Material in Tunnel FET
6.2.1 Device Structure
6.2.2 Device Lay-Out Information of Fe Tunnel
6.3 Results and Analysis
6.4 Conclusion
References
7. Identification of Negative Capacitance in Ferroelectric in FET Devices
Umesh Chandra Bind, Shiromani Balmukund Rahi and Keshav Kumar
7.1 Introduction
7.2 Negative Capacitance
7.3 NC in Ferroelectrics
7.4 Ferroelectric Materials in Practice for NC
7.4.1 Traditional Ferroelectric
7.4.2 Hafnium and Zirconium-Based Ferroelectric
7.4.3 Wurtzite Aluminum Scandium Nitride
7.5 Evidence of NC in Ferroelectrics
7.5.1 For the Concept of NC
7.5.2 For Device Fabrication
7.6 Perspectives
7.7 Conclusion
References
8. Tunnel Field Effect Transistors and Their Application in Biosensors
K. Manikanta, Umakanta Nanda, Pratikhya Raut and Biswajit Jena
8.1 Introduction
8.2 What is Biosensor: Types and its Principle
8.3 Components of Biosensors
8.4 Application of FET in Biosensors
8.5 How TFET Works as a Biosensor and its Structure
8.6 Recent Structures of TFET-Based Bio-Sensors
8.7 Conclusion
References
9. Transparent Conducting Oxides: Introduction, Types, Deposition Techniques and Applications
Isha Arora and Rishi Kant
9.1 Introduction
9.2 Physical Characteristics of TCOs
9.2.1 Optical Properties
9.2.2 Electrical Properties
9.3 Types of Transparent Conductors
9.4 Deposition Techniques
9.5 Sol–Gel Deposition
9.6 Applications of TCOs
9.7 Conclusion
References
10. Ferroelectric and FeFET Devices as Biosensors: Principle, Mechanisms and Applications in Health, Environmental, and Agricultural Monitoring
Umesh Chandra Bind, Keshav Kumar, Vimala Bind, Ajay Kumar and Jyoti Nishad
10.1 Introduction
10.2 Biosensors
10.3 Characteristics of Biosensors
10.4 Interaction Mechanism of Ferroelectric with Physical Stimuli
10.5 Working Principle of Biosensors
10.6 Biosensing Mechanism of Ferroelectrics
10.7 Ferroelectrics for Biosensing
10.8 Ferroelectrics in Health Monitoring
10.9 Ferroelectrics for Environmental Monitoring
10.10 Ferroelectrics for Agricultural Monitoring
10.11 FeFET Biosensors for Monitoring
10.12 Perspective
10.13 Conclusions
References
11. Ferroelectric Application in Recent Nanoscale Device with ITRS Roadmap
Shiromani Balmukund Rahi and Young Suh Song
11.1 Introduction to Ferroelectric Application
11.2 Ferroelectric Materials and Properties
11.3 Basic Scaling and ITRS Roadmap
11.4 Nanoscale Devices: Ultra-Thin-Body MOSFET, Gate-All-Around MOSFET, Gate, Channel, Source/Drain Engineering, Local High Doping for Better Subthreshold Swing
11.5 Nanoscale Devices with Ferroelectric Applications
11.6 Advantages and Potential Applications of Ferroelectric Materials
11.7 Positioning of Ferroelectric Technologies in the ITRS Roadmap
11.8 Possible Challenge in Future Ferroelectric Applications
11.9 Conclusion
References
12. Recent Electron Mobility Models for FeFET
Shiromani Balmukund Rahi and Young Suh Song
12.1 Introduction to Electron Mobility and FeFET
12.2 Classical Electron Mobility Models
12.3 Quantum Mechanical Models for Electron Mobility
12.4 Density Functional Theory (DFT) Approaches for Electron Mobility
12.5 Empirical Electron Mobility Models and Parameter Extraction Techniques
12.6 Challenges and Limitations in Modeling FeFET Electron Mobility
12.7 Future Directions and Emerging Trends in FeFET Electron Mobility Modeling
12.8 Conclusion
References
About the Editors
Index
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