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Next-Generation Nanotechnology

Edited by Vijay Kumar Sharma
Copyright: 2025 | Expected Pub Date:2025//
ISBN: 9781394275168 | Hardcover |
468 pages
Price: $225 USD

One Line Description
Next-Generation Nanotechnology is an essential resource for anyone looking to stay at the forefront of innovation, as it thoroughly explores cutting-edge methodologies and design principles for ultra-nanoscale technology.

Audience
Academics, researchers, and professionals specializing in circuits and systems, communication systems, physics, microelectronics, electronics, signal processing and control systems, and computer science

Description
Modern research aims to make devices more efficient so that next-level systems will be energy-efficient, have faster operating speeds, and occupy minimal space. Traditional methods for the implementation of systems are approaching their fundamental limitations. The field of ultra-nanoscale technology is a prime choice for researchers to work and develop technologies for future systems. The advantages of the ultra-nanoscale field are low-dimensional and high-speed implementation with a focus on high levels of functional integration.
Next-Generation Nanotechnology comprehensively covers both introductory and advanced-level ideas and methodologies, which support future system designs in ultra-nanoscale technologies. The merits and challenges of different technological devices and systems are also discussed in depth. This book focuses on design and techniques for the next generation of intelligent systems, making it an essential resource for novices and experts exploring this innovative technology.

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Author / Editor Details
Vijay Kumar Sharma, PhD is an assistant professor in the School of Electronics and Communication Engineering at Shri Mata Vaishno Devi University. He is published widely in journals and conferences of repute and has authored many book chapters and patents. His research interests are in the area of low-power circuit design.

Table of Contents
Preface
1. Gaussian Doped SOI Junctionless FinFET: A Study of RDF Variability and Parametric Sensitivity
Milad Mehmood Zargar, Md. Waseem Akram, Umayia Mushtaq, Nazida Ansari, Sana Fatima and Dipak Kumar Singh
1.1 Introduction
1.2 FinFET Technology
1.2.1 Applications of FinFET Technology
1.2.2 Performance Comparison of FinFET and (GAA) Gate-All-Around Transistor
1.3 Device Variability
1.3.1 Sources of Variability
1.3.2 Types of Variability
1.4 Junctionless Transistors
1.4.1 Properties of Junctionless Transistors
1.4.2 Comparison Between MOSFET and JLFET
1.4.3 Advantages of JLFET
1.4.4 Non-Uniform Doping Profile in JLFET
1.4.5 ON and OFF States of JLFET Using Both Varied and Identical Doping Profile
1.4.6 Drain Current (Id) vs. Gate Voltage (Vgs) Features of Equal and Unequal Doped JLFET
1.5 Global TCAD Solutions
1.5.1 Models, Methods, and Device Parameters
1.5.2 Model Calibrations
1.6 Simulation Methodology
1.7 Findings and Conversations
1.7.1 Variability Investigation for Varying Channel Length
1.7.2 Variability Investigation for Varying Fin Width
1.7.3 Variability Investigation for Varying Doping Concentration
1.7.4 Variability Investigation for Varying Gaussian Root Mean Square Width or Standard Deviation
1.7.5 Variability Investigation for Varying Fin Height
1.8 Conclusion
References
2. Nanotechnology and Applications
Yogesh Singh, Sunny Kumar Sharma, Purnima Hazra and Ashish Choudhary
2.1 Introduction
2.2 What Makes Nanotechnology Work
2.2.1 Surface to Volume Ratio (S/V)
2.2.2 Quantum Confinement
2.3 Preparation Method
2.4 Classification of Nanoparticles (NPs)
2.5 Applications of Nanotechnology
2.5.1 Automobile
2.5.2 Aerospace
2.5.3 Energy
2.5.4 Agriculture and Industries
2.5.5 Drug Delivery and Medicine
2.5.6 Environmental Remediation
2.5.7 Textile and Clothing
2.5.8 Nutrition Industry
2.6 Future Prospect
2.7 Conclusion
References
3. Comparative Investigation of Various SRAM Cells with High Stability and Low Leakage
Seema Eram, Umayia Mushtaq, Nazida Ansari and Md. Waseem Akram
3.1 Introduction
3.1.1 Transistor Stacking Effect and Leakage Mitigation
3.1.2 Tail Transistor for Power Dissipation Control
3.1.3 Enhanced Read Performance with Single-Ended Read Technique
3.1.4 Differential Write Scheme and Transmission Gate for Improved Write Margin
3.1.5 Circuit Simulations and Technology Node
3.2 Previous Literature
3.3 Leakage Reduction Techniques
3.3.1 Multi-Threshold CMOS
3.3.2 Power Gating
3.3.3 Reverse Body Biasing
3.3.4 Stacked Transistors
3.4 Architecture and Functioning of Different SRAM Cell
3.4.1 6T-SRAM Cell
3.4.2 Conventional 8T-SRAM Cell (Isolated Read Port)
3.4.3 8T-SRAM Cell Utilizing Transmission Gate
3.5 SRAM Cell: Various Performance Parameters
3.5.1 Power Dissipation
3.5.2 SNM
3.5.3 Cell-Ratio (β)
3.5.4 Pull-Up Ratio
3.6 The Proposed 8-T SRAM Cell
3.7 Results and Discussion
3.8 Conclusion
References
4. Application of Nanotechnology in the Development of Latent Fingerprints in the Field of Forensic Dermatoglyphics
Navneet Kumar and Himanshu Yadav
4.1 Introduction
4.2 Principle of Fingerprint Detection
4.3 Techniques for LFPs Analysis
4.4 Nanotechnology in Forensic Science
4.4.1 Ag NPs for LFP Analysis
4.4.2 Au NPs for LFPs Analysis
4.4.3 TiO2 NPs for LFPs Analysis
4.4.4 ZnO NPs for LFPs Analysis
4.4.5 Eu2O3 NPs for LFPs Analysis
4.4.6 SiO2 NPs for LFPs Analysis
4.4.7 Fluorescent NPs for LFPs Analysis
4.4.8 Cadmium Sulphide Quantum Dots for LFPs Analysis
4.4.9 NPs of Fluorescent Silica for the Identification of LFP
4.5 Discussion
4.6 Conclusion
References
5. Nanoelectronics: A Journey from Planar Transistor to Beyond Semiconductor
Kajal and Vijay Kumar Sharma
5.1 Introduction
5.1.1 Scope of Nanoelectronics
5.2 Evolution of Transistor Technology
5.2.1 Planar Transistor
5.2.2 Scaling and Moore’s Law
5.3 Advances in Transistor Design
5.3.1 FinFET Transistor
5.3.2 Triple-Gate MOSFETs
5.3.3 Quadruple-Gate MOSFET
5.3.4 Tunnel Field Effect Transistor
5.4 Challenges in Silicon Semiconductor Technology
5.4.1 NBTI Degradation
5.4.2 PVT Variations
5.5 Beyond Silicon: New Materials and Technologies
5.5.1 III-V Semiconductor
5.5.2 Two-Dimensional Materials
5.5.3 Carbon Nanotubes/Nanowires
5.5.4 Graphene Nanoribbons
5.6 Quantum and Molecular Electronics
5.7 Advanced Device Concept
5.7.1 Spintronics
5.7.2 Neuromorphic Computing
5.7.3 SET Devices
5.8 Conclusion
References
6. EDP-Efficient Level Shifters for Super Threshold Voltage Level Shifting Applications
Mohammed Mahaboob Basha, Gundala Srinivasulu and V. Madhurima
6.1 Introduction
6.1.1 Dynamic Power Reduction
6.1.2 Power Consumption that is Static
6.1.3 Leakage Power Reduction
6.2 Types of Voltage Level Shifters
6.2.1 Differential Cascade Voltage Switch Logic Level Shifter
6.2.2 Current Mirror LS
6.2.3 Improved Current Mirror
6.2.4 Optimized Diode Connected Level Shifter
6.2.5 Energy Efficient High Speed LS for Multiple Core Processors
6.2.6 High-Performance Dynamic Voltage LS
6.2.7 Split-Input Inverter Voltage LS
6.3 Performance Analysis of Start of Art Level Shifters
6.4 Conclusion
References
7. Applications of Nanotechnology in Nanoelectronics: Communication and Biomedical Field
Rubby Mahajan and Ram Prakash
7.1 Introduction
7.2 2D and 3D Materials
7.2.1 Applications of 2D and 3D Materials
7.3 Multigates
7.3.1 Applications
7.3.2 Properties
7.4 Carbon Nanotubes
7.4.1 Electric Discharge Arc Method
7.4.2 Chemical-Based Method
7.4.3 PV Method
7.4.4 Pulsed Laser Deposition Method
7.4.5 Classification of Carbon Nanotubes
7.4.6 Properties of CNTs
7.4.7 Applications
7.5 Graphene Nanoribbon (GNRs)
7.5.1 Synthesis Method
7.5.2 Properties
7.5.3 Applications
7.6 Tunnel Transistor
7.6.1 Quantum Tunneling
7.6.2 Double Gate Tunneling FET
7.7 Junctionless Transistor
7.7.1 Structure of Junctionless Transistors
7.7.1.1 Dual Gate Lateral Transistor
7.7.1.2 Tunnel Junctionless Transistor
7.7.2 Properties and Applications
7.8 Concept of Single Electron Idea
7.8.1 Origins of the Single Electron Idea
7.8.2 Applications
7.8.3 Conclusion
7.9 Fundamental Principles of Spintronics
7.10 Future Prospects
References
8. Exploring CMOS, PTL and GDI Logic Families Based One Bit Full Adder and Subtractor Circuits in Subthreshold Region for Energy and EDP Efficient Applications
Mohammed Mahaboob Basha, P. Lachi Reddy and Srinivasulu Gundala
8.1 Introduction
8.2 GDI- and CMOS-Based Logic Circuits
8.3 A Variety of Approaches and Operation of the GDI-Based Full Adder Circuits
8.3.1 Result and Discussion
8.4 Subthreshold Subtractor Circuits for Energy Efficient Signal Processing Applications
8.4.1 Related Work
8.4.2 LT-TTFS-OB Methodology
8.4.3 Result and Discussion
8.5 Conclusion
References
9. TFET Fundamentals: A Gateway to Nanoscale Electronics
Khuraijam Nelson Singh, Ningombam Ajit Kumar, Sushmita Dandeliya, Pranab Kishore Dutta, Sonal Agrawal, Anurag Srivastava and Gaurav Kaushal
9.1 Introduction
9.1.1 Evolution of TFET
9.1.2 Need of TFET
9.2 Fundamentals of TFET
9.2.1 Working
9.2.2 Transfer Characteristics
9.2.3 Ambipolarity
9.3 Techniques for Enhancing Performance
9.3.1 Improving ON-Current
9.3.2 Reduction of Ambipolar Current
9.4 Application in Biosensor
9.4.1 Working of TFET-Based Biosensors
9.4.2 Advances in TFET-Based Biosensors
9.5 Significance of TFET in Advancing Nanoscale Electronics
9.6 Challenges and Future Outlook
9.7 Conclusion
References
10. Revolutionizing Data Processing: In-Memory Computing and the Shift from Traditional Architectures
Nazrana Gulzar, Nazida Ansari, Umayia Mushtaq and Md Waseem Akram
10.1 Introduction
10.2 In-Memory Computing: Enhancing Data Processing Efficiency
10.3 Comparing Traditional Computing Architecture with In-Memory Computing
10.4 Applications of IMC
10.4.1 Facilitating Technology
10.4.2 Business Organizations
10.4.3 Large Scale Data
10.4.4 Power Grid
10.4.5 Real-Time Insight
10.5 Types of Memory Used in IMC
10.5.1 Flash Memory
10.5.2 DRAM (Dynamic Random Access Memory)
10.5.3 Static Random Access Memory (SRAM)
10.6 Operations of 6T-SRAM
10.6.1 Hold-Operation in SRAM
10.6.2 Read-Operation
10.6.3 Write-Operation
10.7 Architecture of SRAM-Based IMC
10.8 Comparative Analysis of IMC Architecture Using Different Memory Types
10.8.1 Two Input Arithmetic Logic Unit
10.8.2 IMC Operation Using TCAM
10.8.3 IMC Circuit Utilizing 8+T-SRAM
10.8.4 PCM (Phase Change Memory)
10.9 Design Challenges with SRAM Based IMC
10.9.1 Low SRAM Density
10.9.2 Signal Margin Vs. Read Precision
10.9.3 Cell and Array Size
10.9.4 Read Disturb
10.10 Conclusion
References
11. The Tunnel FET: Fundamentals, Calibration, and Simulation
Nisha Yadav, Sunil Jadav and Gaurav Saini
11.1 Need of Tunnel FETs
11.2 Origin of Tunnel FETs
11.3 TFET Structure and Working Principle
11.3.1 TFET Structure
11.3.2 Working Principle
11.3.3 Band-To-Band Tunneling (BTBT)
11.3.3.1 Local Band-To-Band Tunneling
11.3.3.2 Dynamic Nonlocal Band-To-Band Tunneling
11.4 Performance Parameters
11.4.1 ON-Current (ION)
11.4.2 OFF-Current (IOFF)
11.4.3 Threshold Voltage
11.4.4 Subthreshold Swing
11.4.5 ON-Current/OFF-Current Ratio (ION/IOFF)
11.4.6 Ambipolar Current (Iamb)
11.5 The Development of TFET Technology
11.6 Calibration
11.7 Simulation of DG-TFET
11.8 Challenges for TFET
11.9 Conclusion
References
12. The Junctionless Device
Sandeep Kumar, Arun Kumar Chatterjee and Rishikesh Pandey
12.1 Introduction
12.1.1 Why Junctionless Devices?
12.1.2 Basic Structure of Junctionless Device
12.2 Qualitative Behavior of JLFETs
12.2.1 Full Depletion Mode
12.2.2 Partial Depletion Mode
12.2.3 Full Conduction Mode
12.2.4 Accumulation Mode
12.2.5 Performance Matrices
12.2.6 Pros and Cons
12.3 Electrical Characteristics of JLFET
12.3.1 Variations in Gate Bias
12.3.2 Variations in Drain Bias
12.4 Design Constraints for Junctionless Devices
12.4.1 Dependency on Gate Work Function
12.4.2 Dependency on Semiconductor Layer Thickness
12.4.3 Dependency on Doping Concentration
12.5 Classification of JLFETs
12.5.1 Variations in Gate Material
12.5.2 Variations in Gate Dielectric
12.5.3 Variations in Channel Dimensions
12.5.4 Variations in Channel Doping
12.5.5 Doping-Less JLFETs
12.5.6 Exploring the Structural and Electrical Asymmetry
12.6 Status of Model Formulation for JLFETs
12.7 Applications of JLFETs
12.8 Simulation of JLFETs
12.8.1 Simulation Flow
12.8.2 Simulation Example
12.9 Conclusion
References
13. Tuning the Electronic and Spintronic Properties of BN Nanoribbons via C-Doping
Ajay Kumar Rakesh, Ravindra Kumar, Ankita Nemu, Neha Tyagi, Anil Govindan and Neeraj K. Jaiswal
13.1 Introduction
13.1.1 Boron Nitride Nanoribbons
13.2 Significance of Boron Nitride Nanoribbons
13.3 Techniques for Synthesis of h-BN
13.3.1 The Bottom-Up Approach
13.3.1.1 Chemical Vapor Deposition (CVD)
13.3.1.2 Physical Vapor Deposition (PVD)
13.3.1.3 Pulsed Laser Deposition (PLD)
13.3.2 The Top-Down Approach
13.3.2.1 Mechanical Exfoliation
13.3.2.2 Liquid Exfoliation
13.3.2.3 Ball Milling
13.4 Synthesis of BNNR
13.5 Edge Passivation of BNNR
13.6 Doping of BNNR
13.7 Computational Details
13.8 Results and Discussion
13.8.1 Structural Stability
13.8.2 Electronic and Magnetic Properties
13.9 Effect of Concentration Change
13.9.1 Structural Stability
13.9.2 Electronic Properties
13.10 Summary
References
14. Revolutionizing Information Processing: Unveiling the Potential of Spintronics through Cutting‑Edge Electron Spin Research
R. Bhattacharya
14.1 Introduction
14.2 Understanding Spintronics: Types
14.2.1 Spin, Spin Transport, Spin Injection, and Spin Current
14.3 Spintronic Materials and Devices
14.3.1 Design and Fabrication of Spintronic Devices
14.3.2 Advantages Over Traditional Counterparts
14.3.3 Integration with Electronics
14.3.4 Challenges and Opportunities
14.4 Manipulating Spin–Orbit Coupling
14.5 Spin Transport and Injection
14.5.1 Efficient Spin Transport Achieved Over Long Distances
14.5.2 Spin Qubits
14.5.3 Coherence and Long-Range Entanglement of Spin Qubits
14.6 Spintronic Memory Devices
14.6.1 Advantages Compared to Traditional Memory Technologies
14.7 Challenges and Future Directions
14.7.1 Potential Solutions and Road Map for Future Research
14.8 Mathematical Consideration of Spintronics
14.9 Conclusions
Acknowledgement
References
15. Trade-Offs in the Ultra-Nanoscale: Balancing Performance and Constraints
Pankaj Bhambri and Alex Khang
15.1 Introduction
15.1.1 Significance of Ultra-Nanoscale Technologies
15.1.2 Objectives and Scope
15.2 Overview of Ultra-Nanoscale Design
15.2.1 Evolution of Ultra-Nanoscale Applications
15.2.2 Innovative Design Approaches
15.3 Performance Optimization in Ultra-Nanoscale Applications
15.3.1 Quantum Dots and Nanosensors
15.3.2 Velocity Maximization Strategies
15.3.3 Energy Economy Considerations
15.3.4 Processing Capability Enhancement
15.3.5 Performance Vs. Power Consumption (Pareto Efficiency)
15.4 Nanomaterials in Ultra-Nanoscale Technologies
15.4.1 Impact of Nanomaterials on Performance
15.4.2 Challenges and Trade-Offs in Material Selection
15.4.3 Insights from Newly Developed Nanomaterials
15.5 Design Techniques with Logical Schematics and Characteristics
15.5.1 Fin Field-Effect Transistor (FinFET) Design
15.5.2 Tunnel Field-Effect Transistor (TFET)
15.5.3 Quantum Dot Cellular Automata (QCA)
15.5.4 Nanowire Transistors
15.5.5 Carbon Nanotube Field-Effect Transistors (CNTFETs)
15.6 Complex Limitations in the Ultra-Nanoscale Realm
15.6.1 Quantum Effects
15.6.2 Surface-To-Volume Ratios
15.6.3 Thermal Factors
15.6.4 Reassessing Conventional Design Paradigms
15.7 Manufacturing Challenges and Solutions
15.7.1 Precision Requirements in Manufacturing Processes
15.7.2 Trade-Offs in the Pursuit of Manufacturability
15.7.3 Innovative Manufacturing Methods
15.8 Ethical Considerations in Ultra-Nanoscale Technologies
15.9 Real-World Case Studies and Examples
15.9.1 Medical Applications
15.9.2 Information Technology
15.10 Conclusion
References
16. Carbon Nanotube Field Effect Transistor Technology: Fundamentals & Applications
Ekta Jolly and Vijay Kumar Sharma
16.1 Introduction
16.2 CNT Fundamentals
16.2.1 CNTFET Types and Design Principle
16.3 CNTFET Modeling Approaches
16.3.1 CNTFET I-V Model
16.3.2 CNTFET C-V Model
16.3.3 Subthreshold Conduction of CNTFETs
16.4 CNTFET-Based Circuits
16.4.1 CNTFET-Based Ternary Logic Gates
16.4.2 Ternary Decoder
16.4.3 Ternary Adder Module
16.4.4 Ternary Multiplier Circuit
16.4.5 Ternary Flip-Flop
16.4.5.1 CNTFET-Based Successor and Predecessor Design
16.4.5.2 CNTFET’s DLatch-SP and DFlipFlapFlop-SP
16.5 Conclusion
References
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Next-Generation Nanotechnology