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Advanced Topological Insulators

Edited by Huixia Luo
Copyright: 2019   |   Status: Published
ISBN: 9781119407294  |  Hardcover  |  
414 pages | 141 illustrations
Price: $225 USD
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One Line Description
Advanced Topological Insulators provides researchers and graduate students with the physical understanding and mathematical tools needed to embark on research in this rapidly evolving field.

Audience
The book is written for researchers from diverse backgrounds across chemistry, physics, materials science and surface engineering.

Description
Topological insulators is one of the most exciting areas of research in condensed matter physics.cTopological insulators are materials with nontrivial symmetry-protected topological order that behaves as insulators in their interior but whose surface contains conducting states, meaning that electrons can only move along the surface of the material.
During the past decade, myriad reliable theoretical and experimental data have been accumulated on topological insulators. The time is now right to gather together this information into a handbook to make it readily available for researchers and students preparing to work in this area of condensed matter physics, quantum information and materials science. Presenting the latest developments, this book covers most introductory experiments and applications in topological insulators and provides a foundation for understanding the field.
Some of the topics covered in this groundbreaking book are:
• Shows how to use topological insulator materials for advanced optoelectronic devices.
• Explains what topological insulator thin films and artificial topological superconductors are.
• Discusses dimensional crossover of topological properties in thin films of topological insulators
(TI) and Weyl semimetals, electronic properties on the surface of TI nanoparticles and TI nanowires as a constrained electronic system. The effects of disorder are also highlighted.
• Demonstrates that a purely local interaction can cause topological transitions by renormalizing kinetic energy terms alone, without phase transitions associated with order parameters.
Disorder is also a means of changing the topology of Chern insulators as it localizes every state except for those carrying the topological invariant.
• Presents two Q-switched Erbium-doped fiber lasers utilizing topology insulators as a saturable absorber.
• Introduces several statistical aspects related to the critical phenomena of topological phase transitions.

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Author / Editor Details
Huixia Luo received her PhD in physical materials science from Leibniz University, Hanover, Germany in 2012. After a postdoc period at Princeton University, she joined the School ofMaterials Science and Engineering at Sun Yat-Sen University, Guangzhou, China in 2016. She has published more than 30 peer-reviewed papers in SCI journals. Professor Luo is engaged in searching for the novel functional inorganic materials (oxygen transport membrane materials) and the condensed physical materials (such as new superconductor, magnetic material, topological insulators, Dirac and Weyl semimetals, etc).

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