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Submit a ProposalNanodevices for Integrated Circuit Design
 | Edited by Suman Lata Tripathi, Abhishek Kumar, K. Srinivasa Rao, and Prasantha R. Mudimela Series: Engineering Systems Design for Sustainable Development Copyright: 2024 | Status: Published ISBN: 9781394185788 | Hardcover | 298 pages Price: $225 USD  |
One Line Description
Written and edited by a team of experts in the field, this important new volume broadly covers the design of nano-devices and their integrated applications in digital and analog integrated circuits (IC) design.
Audience
Researchers, academicians, engineers, students, and industry professionals working in the areas of semiconductor devices, integrated circuit design, and their applications
Researchers, academicians, engineers, students, and industry professionals working in the areas of semiconductor devices, integrated circuit design, and their applications
Description
Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design.
This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.
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Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design.
This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.
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Author / Editor Details
Suman Lata Tripathi, PhD, is a professor at Lovely Professional University with more than 21 years of experience in academics. She has published more than 103 research papers in refereed journals and conferences. She has organized several workshops, summer internships, and expert lectures for students, and she has worked as a session chair, conference steering committee member, editorial board member, and reviewer for IEEE journals and conferences. She has published three books and currently has multiple volumes scheduled for publication from Wiley-Scrivener.
Suman Lata Tripathi, PhD, is a professor at Lovely Professional University with more than 21 years of experience in academics. She has published more than 103 research papers in refereed journals and conferences. She has organized several workshops, summer internships, and expert lectures for students, and she has worked as a session chair, conference steering committee member, editorial board member, and reviewer for IEEE journals and conferences. She has published three books and currently has multiple volumes scheduled for publication from Wiley-Scrivener.
Abhishek Kumar, PhD, is an associate professor at and obtained his PhD in the area of VLSI Design for Low Power and Secured Architecture from Lovely Professional University, India. With over 11 years of academic experience, he has published more than 30 research papers and proceedings in scholarly journals. He has also published nine book chapters and one authored book. He has worked as a reviewer and program committee member and editorial board member for academic and scholarly conferences and journals, and he has 11 patents to his credit.
K. Srinivasa Rao, PhD, is a professor and Head of Microelectronics Research Group, Department of Electronics and Communication Engineering at the Koneru Lakshmaiah Education Foundation, India. He has earned multiple awards for his scholarship and has published more than 150 papers in scientific journals and presented more than 55 papers at scientific conferences around the world.
Prasantha R. Mudimela, PhD, is a professor in the Department of Electronics and Communication Engineering, GITAM (deemed to be University), Hyderabad campus, India. He has two years of postdoc experience from the University of Namur, Belgium and KAUST, Saudi Arabia. He has over 15 years of teaching and research experience, and he has published over 45 refereed journal and conference papers.
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Table of Contents
List of Contributors
Preface
Acknowledgements
1. Growth of Nano-Wire Field Effect Transistor in 21st Century
Kunal Sinha
1.1 Introduction
1.2 Initial Works on Nanowire Field-Effect-Transistors (NW-FET)
1.2(A) Theoretical and Simulation Studies on Nanowire FET (NW-FET)
1.2(B) Fabrication of Nanowire Field-Effect-Transistor (NW-FET)
1.3 Application of Nanowire Field-Effect-Transistors (NW-FET)
1.4 Conclusion
References
2. Impact of Silicon Nanowire-Based Transistor in IC Design Perspective
G. Boopathi Raja
2.1 Introduction
2.2 Nanoscale Devices
2.2.1 Carbon Nanostructures
2.2.2 Nanoelectromechanical Systems
2.2.3 Graphene-Based Transistors
2.2.4 Silicon Nanowire Based Devices
2.3 Nanowire Heterostructures and Silicon Nanowires
2.3.1 Characteristics of SiNWs
2.3.2 Fabrication
2.3.3 Applications of SiNWs
2.4 Performance Analysis of Si Nanowire with SOI FET
2.5 Conclusion
References
3. Kink Effect in Field Effect Transistors: Different Models and Techniques
Abdelaali Fargi, Sami Ghedira and Adel Kalboussi
3.1 Introduction
3.2 Techniques of Kink Effect
3.2.1 Current-Voltage Technique
3.2.2 Pulsed I-V Technique
3.2.3 Capacitance-Voltage Technique
3.3 Different Models of Kink Effect
3.4 Kink Effect in MOS Capacitors
3.4.1 Incomplete Ionization Model
3.4.2 Simulation of the Kink Effect in MOS Capacitor
3.4.2.1 Effect of the Variation of Activation Energy
3.4.2.2 Effect of the Variation of Traps Density
3.4.2.3 Effect of the Variation of Capture Cross Section
3.4.3 Comparison Between Experimental and Simulation Results
3.4.3.1 Hysteresis Effect on the C-V Characteristics
3.4.3.2 Proof of the Origin of Kink Effect
3.5 Conclusion
References
4. Next Generation Molybdenum Disulfide FET: Its Properties, Evaluation, and Its Applications
Vydha Pradeep Kumar and Deepak Kumar Panda
4.1 Introduction of Two-Dimensional Materials
4.2 Evaluation of 2D-Materials
4.3 Overview of MoS2
4.3.1 Why MoS2
4.3.2 MoS2 Structured Design
4.4 Properties of MoS2
4.4.1 Bulk Characteristics
4.4.2 Electrical and Optical Characteristics
4.4.2.1 BandGap
4.4.2.2 Photoluminescence Spectra
4.4.2.3 Injection of Electrons
4.4.2.4 Transistor
4.4.3 Mechanical Properties
4.4.3.1 Valleytronics
4.4.3.2 Optical Transitions
4.4.3.3 Spin-Orbit Valence Band
4.5 Fabrication of MoS2
4.5.1 Mechanical Exfoliation
4.5.2 Intercalation
4.5.3 Solvent Exfoliation
4.5.4 Chemical Vapor Deposition (CVD)
4.6 Applications of MoS2
4.6.1 Solid Lubricants
4.6.2 Electronic Applications
4.6.3 Field-Effect Transistor
4.6.4 Switching Transistor
4.6.5 Nano-Structures
4.6.6 Biosensors
4.6.7 FET-Based Biosensors
4.7 Comparison of Other 2D Materials with MoS2
4.8 Conclusion
References
5. Impact of Working Temperature on the ION/IOFF Ratio of a Hetero Step-Shaped Gate TFET With Improved Ambipolar Conduction
Bijoy Goswami, Savio Jay Sengupta, Ankur Jyoti Sarmah and Nalin Behari Dev Choudhury
5.1 Introduction
5.2 Device Structure
5.3 Results and Discussion
5.4 Conclusion
References
6. Analysis of RF with DC and Linearity Parameter and Study of Noise Characteristics of Gate-All-Around Junctionless FET (GAA-JLFET) and Its Applications
Pratikhya Raut, Umakanta Nanda and Deepak Kumar Panda
6.1 Introduction
6.2 Structure of GAA-JLFET
6.3 Results and Discussion
6.3.1 DC Analysis
6.3.2 RF Analysis
6.3.3 Linearity Analysis
6.3.4 Noise Analysis
6.3.4.1 Thermal Noise
6.3.4.2 Flicker Noise
6.3.4.3 Gate-Induced Thermal Noise
6.4 Applications
6.5 Conclusion
References
7. E-Mode-Operated Advanced III-V Heterostructure Quantum Well Devices for Analog/RF and High-Power Switching Applications
A. Mohanbabu, N. Vinodhkumar, S. Maheswari, S. Baskaran, V. Janakiraman, M. Saravanan and P. Murugapandiyan
7.1 Silicon Era and Scaling Limit
7.2 III-V GaN-Based Compound Semiconductors
7.3 Band-Gap Engineering
7.4 Quantum Well
7.5 Polarization in GaN Devices and their Specific Properties
7.6 Strain and Lattice Mismatch in III-N Semiconductors
7.7 High Electron Mobility Transistors (HEMTs)
7.8 Two-Dimensional Electron Gas (2DEG)
7.9 AlGaN/GaN Heterostructure HEMT
7.9.1 Scope of the III-V Heterostructure Quantum Well Device
7.9.2 Problem Statement
7.9.3 Motivation for the Present III-V Heterostructure Quantum Well Device
7.10 Enhancement Mode GaN DH-HEMTs Device With Boron-Doped Gate Cap Layer
7.10.1 Device Architecture
7.11 High-K Gate Dielectric III-Nitride GaN MIS-HEMT Devices
7.11.1 Device Architecture
7.11.2 Boost Converter Circuit Application
7.12 Conclusion
References
8. Design of FinFET as Biosensor
Suman Lata Tripathi and Balwinder Raj
8.1 Introduction
8.2 Existing FET Based Biosensors
8.2.1 TGRC-MOSFET as a Biosensor
8.2.2 An N-Type Nanogap Embedded Polarity Biased Based DM- EDTFET Biosensor
8.2.3 Cavity on Source Charge Plasma TFET-Based Biosensor
8.2.4 Dielectric Modulated Double Gate Junctionless MOSFET Biosensor
8.2.5 A Double Gate Dielectric Modulated Junctionless Tunnel Field-Effect Transistor as a Biosensor
8.3 Performance Parameters of Biosensors
8.4 FinFET Designed as Biosensor Using Visual TCAD
8.5 Biosensors in Disease Detection
8.6 Conclusion
8.7 Acknowledgement
References
9. Biodegradable and Flexible Electronics: Types and Applications
Vrinda Gupta, Sachin Himalyan and Archit Sundriyal
9.1 Introduction
9.2 Biodegradable and Flexible Electronics
9.3 Types of Materials Used for Biodegradable and Flexible Electronics
9.3.1 Materials for Biodegradable Electronics
9.3.2 Materials for Flexible Electronics
9.4 Applications of Biodegradable and Flexible Electronic Devices
9.4.1 Sensing and Diagnosis
9.4.2 Energy Storage
9.4.3 Smart Textiles
9.4.3.1 Chameleonic Textiles
9.4.3.2 Intelligent Textile Sutures
9.4.3.3 Textile-Based Flexible and Printable Material
9.4.4 Wearable Electronics
9.5 Conclusion
References
10. Novel Parameters Extraction Method of High-Speed PIN Diode for Power Integrated Circuit
Sami Ghedira and Abdelaali Fargi
10.1 Introduction
10.2 Review of the Technology and Physics of Power PIN Diodes
10.2.1 Technological Aspect
10.2.2 Physical Aspect
10.3 State of the Art of PIN Diode Parameters Extraction
10.4 Proposed Method
10.4.1 Principle
10.4.2 Doping Profile Parameters Identification
10.4.2.1 Experimental Method
10.4.2.2 Model Description
10.4.2.3 Parameters Extraction Procedure
10.4.3 Ambipolar Lifetime Estimation
10.4.3.1 Experimental Method
10.4.3.2 Numerical Analysis of OCVD Method
10.4.3.3 Parameters Extraction Procedure
10.5 Validation
10.6 Conclusion
References
11. Edge AI – A Promising Technology
Remya R., Nalesh S. and Kala S.
11.1 Introduction
11.2 Deep Neural Networks
11.2.1 Multi-Layer Perceptrons (MLP)
11.2.2 Convolutional Neural Networks (CNNs)
11.2.3 Recurrent Neural Networks (RNNs)
11.3 Model Compression Techniques for Deep Learning
11.3.1 Pruning
11.3.2 Quantization
11.3.3 Low Rank Factorization
11.3.4 Knowledge Distillation
11.4 Computing Infrastructures
11.4.1 GPU Accelerator
11.4.2 FPGA Accelerator
11.5 Conclusion
References
12. Tunable Frequency Oscillator
Abhishek Kumar
12.1 Introduction
12.2 Experimental Methods and Materials
12.2.1 Varactor Diode
12.2.2 Active Inductor
12.3 Results and Discussion
12.4 Conclusion
References
13. Introduction to Nanomagnetic Materials for Electronic Devices: Fundamental, Synthesis, Classification and Applications
Shivani Malhotra, Mansi Chitkara, Lipika Gupta and Monika Parmar
13.1 Introduction – An Explanation of the Process and Approach
13.2 Nanomaterials
13.2.1 Surface to Volume Ratio
13.2.2 Quantum Confinement Effect
13.3 Synthesis and Characterization of Nano Materials
13.4 Characterization Technique for Structural Analysis
13.5 Magnetic Materials
13.6 Classification of Magnetic Materials
13.7 Magnetic Properties
13.8 Ferrites
13.8.1 Classification and Types of Ferrites
13.8.2 Spinel Ferrite
13.8.3 Garnet
13.8.4 Ortho Ferrite Structure
13.8.5 Magnetoplumbite Structure
13.8.6 Hexagonal Ferrites
13.8.7 Classification of Hexaferrite
13.9 Applications of Magnetic Materials
13.10 Conclusion
References
About the Editors
Index
Back to Top
List of Contributors
Preface
Acknowledgements
1. Growth of Nano-Wire Field Effect Transistor in 21st Century
Kunal Sinha
1.1 Introduction
1.2 Initial Works on Nanowire Field-Effect-Transistors (NW-FET)
1.2(A) Theoretical and Simulation Studies on Nanowire FET (NW-FET)
1.2(B) Fabrication of Nanowire Field-Effect-Transistor (NW-FET)
1.3 Application of Nanowire Field-Effect-Transistors (NW-FET)
1.4 Conclusion
References
2. Impact of Silicon Nanowire-Based Transistor in IC Design Perspective
G. Boopathi Raja
2.1 Introduction
2.2 Nanoscale Devices
2.2.1 Carbon Nanostructures
2.2.2 Nanoelectromechanical Systems
2.2.3 Graphene-Based Transistors
2.2.4 Silicon Nanowire Based Devices
2.3 Nanowire Heterostructures and Silicon Nanowires
2.3.1 Characteristics of SiNWs
2.3.2 Fabrication
2.3.3 Applications of SiNWs
2.4 Performance Analysis of Si Nanowire with SOI FET
2.5 Conclusion
References
3. Kink Effect in Field Effect Transistors: Different Models and Techniques
Abdelaali Fargi, Sami Ghedira and Adel Kalboussi
3.1 Introduction
3.2 Techniques of Kink Effect
3.2.1 Current-Voltage Technique
3.2.2 Pulsed I-V Technique
3.2.3 Capacitance-Voltage Technique
3.3 Different Models of Kink Effect
3.4 Kink Effect in MOS Capacitors
3.4.1 Incomplete Ionization Model
3.4.2 Simulation of the Kink Effect in MOS Capacitor
3.4.2.1 Effect of the Variation of Activation Energy
3.4.2.2 Effect of the Variation of Traps Density
3.4.2.3 Effect of the Variation of Capture Cross Section
3.4.3 Comparison Between Experimental and Simulation Results
3.4.3.1 Hysteresis Effect on the C-V Characteristics
3.4.3.2 Proof of the Origin of Kink Effect
3.5 Conclusion
References
4. Next Generation Molybdenum Disulfide FET: Its Properties, Evaluation, and Its Applications
Vydha Pradeep Kumar and Deepak Kumar Panda
4.1 Introduction of Two-Dimensional Materials
4.2 Evaluation of 2D-Materials
4.3 Overview of MoS2
4.3.1 Why MoS2
4.3.2 MoS2 Structured Design
4.4 Properties of MoS2
4.4.1 Bulk Characteristics
4.4.2 Electrical and Optical Characteristics
4.4.2.1 BandGap
4.4.2.2 Photoluminescence Spectra
4.4.2.3 Injection of Electrons
4.4.2.4 Transistor
4.4.3 Mechanical Properties
4.4.3.1 Valleytronics
4.4.3.2 Optical Transitions
4.4.3.3 Spin-Orbit Valence Band
4.5 Fabrication of MoS2
4.5.1 Mechanical Exfoliation
4.5.2 Intercalation
4.5.3 Solvent Exfoliation
4.5.4 Chemical Vapor Deposition (CVD)
4.6 Applications of MoS2
4.6.1 Solid Lubricants
4.6.2 Electronic Applications
4.6.3 Field-Effect Transistor
4.6.4 Switching Transistor
4.6.5 Nano-Structures
4.6.6 Biosensors
4.6.7 FET-Based Biosensors
4.7 Comparison of Other 2D Materials with MoS2
4.8 Conclusion
References
5. Impact of Working Temperature on the ION/IOFF Ratio of a Hetero Step-Shaped Gate TFET With Improved Ambipolar Conduction
Bijoy Goswami, Savio Jay Sengupta, Ankur Jyoti Sarmah and Nalin Behari Dev Choudhury
5.1 Introduction
5.2 Device Structure
5.3 Results and Discussion
5.4 Conclusion
References
6. Analysis of RF with DC and Linearity Parameter and Study of Noise Characteristics of Gate-All-Around Junctionless FET (GAA-JLFET) and Its Applications
Pratikhya Raut, Umakanta Nanda and Deepak Kumar Panda
6.1 Introduction
6.2 Structure of GAA-JLFET
6.3 Results and Discussion
6.3.1 DC Analysis
6.3.2 RF Analysis
6.3.3 Linearity Analysis
6.3.4 Noise Analysis
6.3.4.1 Thermal Noise
6.3.4.2 Flicker Noise
6.3.4.3 Gate-Induced Thermal Noise
6.4 Applications
6.5 Conclusion
References
7. E-Mode-Operated Advanced III-V Heterostructure Quantum Well Devices for Analog/RF and High-Power Switching Applications
A. Mohanbabu, N. Vinodhkumar, S. Maheswari, S. Baskaran, V. Janakiraman, M. Saravanan and P. Murugapandiyan
7.1 Silicon Era and Scaling Limit
7.2 III-V GaN-Based Compound Semiconductors
7.3 Band-Gap Engineering
7.4 Quantum Well
7.5 Polarization in GaN Devices and their Specific Properties
7.6 Strain and Lattice Mismatch in III-N Semiconductors
7.7 High Electron Mobility Transistors (HEMTs)
7.8 Two-Dimensional Electron Gas (2DEG)
7.9 AlGaN/GaN Heterostructure HEMT
7.9.1 Scope of the III-V Heterostructure Quantum Well Device
7.9.2 Problem Statement
7.9.3 Motivation for the Present III-V Heterostructure Quantum Well Device
7.10 Enhancement Mode GaN DH-HEMTs Device With Boron-Doped Gate Cap Layer
7.10.1 Device Architecture
7.11 High-K Gate Dielectric III-Nitride GaN MIS-HEMT Devices
7.11.1 Device Architecture
7.11.2 Boost Converter Circuit Application
7.12 Conclusion
References
8. Design of FinFET as Biosensor
Suman Lata Tripathi and Balwinder Raj
8.1 Introduction
8.2 Existing FET Based Biosensors
8.2.1 TGRC-MOSFET as a Biosensor
8.2.2 An N-Type Nanogap Embedded Polarity Biased Based DM- EDTFET Biosensor
8.2.3 Cavity on Source Charge Plasma TFET-Based Biosensor
8.2.4 Dielectric Modulated Double Gate Junctionless MOSFET Biosensor
8.2.5 A Double Gate Dielectric Modulated Junctionless Tunnel Field-Effect Transistor as a Biosensor
8.3 Performance Parameters of Biosensors
8.4 FinFET Designed as Biosensor Using Visual TCAD
8.5 Biosensors in Disease Detection
8.6 Conclusion
8.7 Acknowledgement
References
9. Biodegradable and Flexible Electronics: Types and Applications
Vrinda Gupta, Sachin Himalyan and Archit Sundriyal
9.1 Introduction
9.2 Biodegradable and Flexible Electronics
9.3 Types of Materials Used for Biodegradable and Flexible Electronics
9.3.1 Materials for Biodegradable Electronics
9.3.2 Materials for Flexible Electronics
9.4 Applications of Biodegradable and Flexible Electronic Devices
9.4.1 Sensing and Diagnosis
9.4.2 Energy Storage
9.4.3 Smart Textiles
9.4.3.1 Chameleonic Textiles
9.4.3.2 Intelligent Textile Sutures
9.4.3.3 Textile-Based Flexible and Printable Material
9.4.4 Wearable Electronics
9.5 Conclusion
References
10. Novel Parameters Extraction Method of High-Speed PIN Diode for Power Integrated Circuit
Sami Ghedira and Abdelaali Fargi
10.1 Introduction
10.2 Review of the Technology and Physics of Power PIN Diodes
10.2.1 Technological Aspect
10.2.2 Physical Aspect
10.3 State of the Art of PIN Diode Parameters Extraction
10.4 Proposed Method
10.4.1 Principle
10.4.2 Doping Profile Parameters Identification
10.4.2.1 Experimental Method
10.4.2.2 Model Description
10.4.2.3 Parameters Extraction Procedure
10.4.3 Ambipolar Lifetime Estimation
10.4.3.1 Experimental Method
10.4.3.2 Numerical Analysis of OCVD Method
10.4.3.3 Parameters Extraction Procedure
10.5 Validation
10.6 Conclusion
References
11. Edge AI – A Promising Technology
Remya R., Nalesh S. and Kala S.
11.1 Introduction
11.2 Deep Neural Networks
11.2.1 Multi-Layer Perceptrons (MLP)
11.2.2 Convolutional Neural Networks (CNNs)
11.2.3 Recurrent Neural Networks (RNNs)
11.3 Model Compression Techniques for Deep Learning
11.3.1 Pruning
11.3.2 Quantization
11.3.3 Low Rank Factorization
11.3.4 Knowledge Distillation
11.4 Computing Infrastructures
11.4.1 GPU Accelerator
11.4.2 FPGA Accelerator
11.5 Conclusion
References
12. Tunable Frequency Oscillator
Abhishek Kumar
12.1 Introduction
12.2 Experimental Methods and Materials
12.2.1 Varactor Diode
12.2.2 Active Inductor
12.3 Results and Discussion
12.4 Conclusion
References
13. Introduction to Nanomagnetic Materials for Electronic Devices: Fundamental, Synthesis, Classification and Applications
Shivani Malhotra, Mansi Chitkara, Lipika Gupta and Monika Parmar
13.1 Introduction – An Explanation of the Process and Approach
13.2 Nanomaterials
13.2.1 Surface to Volume Ratio
13.2.2 Quantum Confinement Effect
13.3 Synthesis and Characterization of Nano Materials
13.4 Characterization Technique for Structural Analysis
13.5 Magnetic Materials
13.6 Classification of Magnetic Materials
13.7 Magnetic Properties
13.8 Ferrites
13.8.1 Classification and Types of Ferrites
13.8.2 Spinel Ferrite
13.8.3 Garnet
13.8.4 Ortho Ferrite Structure
13.8.5 Magnetoplumbite Structure
13.8.6 Hexagonal Ferrites
13.8.7 Classification of Hexaferrite
13.9 Applications of Magnetic Materials
13.10 Conclusion
References
About the Editors
Index
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