-
Browse Book Series
- Adhesion and Adhesives: Fundamental and Applied Aspects
- Advances in Additive Manufacturing Technologies
- Advances in Antenna, Microwave and Communication Engineering
- Advances in Biofeedstocks and Biofuels
- Advances in Cyber Security
- Advances in Data Engineering and Machine Learning
- Advances in E-Mobility
- Advances in Hydrogen Production and Storage
- Advances in Intelligent and Scientific Computing (AISC)
- Advances in Learning Analytics for Intelligent Cloud-IoT Systems
- Advances in Membrane Processes
- Advances in Nanotechnology and Applications
- Advances in Natural Gas Engineering
- Advances in Pipes and Pipelines
- Advances in Production Engineering
- Advances in Solar Cell Materials and Storage
- Applied Functional Materials
- Artificial Intelligence and Soft Computing for Industrial Transformation
- Astrobiology Perspectives on Life in the Universe
- Bioprocessing in Food Science
- Computational Intelligence and Biomedical Engineering
- Concise Introductions to AI and Data Science
- Cyber Systems and Quantum Engineering
- Decentralized Systems and Next-Generation Internet
- Diatoms: Biology and Applications
- Digital Convergence in Engineering Systems
- Emerging Trends in Medicinal and Pharmaceutical Chemistry
- Engineering Systems Design for Sustainable Development
- Fintech in a Sustainable Digital Society
- Industry 5.0 Transformation Applications
- Infectious and Rare Diseases
- Innovations in Materials and Manufacturing
- Machine Learning in Biomedical Science and Healthcare Informatics
- Materials Degradation and Failure
- Mathematics and Computer Science
- Next-Generation Computing and Communication Engineering
- Performability Engineering Series
- Rotating Machinery Fundamentals and Advances
- Studies in Computational Intelligence and Smart Technologies
- Sustainable Computing and Optimization
Browse Subject Areas
For Authors
Submit a ProposalAdvanced Ultra Low-Power Semiconductor Devices
 | Design and Applications Edited by Shubham Tayal, Abhishek Kumar Upadhyay, Shiromani Balmukund Rahi, and Young Suh Song Copyright: 2024 | Status: Published ISBN: 9781394166411 | Hardcover | 306 pages Price: $225 USD  |
One Line Description
Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors.
Audience
Researchers, academicians, engineers, students, and industry professionals working with metal oxide semiconductor field-effect transistors
Researchers, academicians, engineers, students, and industry professionals working with metal oxide semiconductor field-effect transistors
Description
This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field.
Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications.
Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The books scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industrys future.
Back to Top
This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field.
Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications.
Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The books scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industrys future.
Back to Top
Author / Editor Details
Shubham Tayal, PhD, is an assistant professor in the Department of Electronics and Communication Engineering at SR University, Warangal, India. He has more than six years of academic and research experience and has published more than 30 research papers in various scholarly journals and conferences. He is on the editorial and reviewer panel of many journals and conferences, as well. He is the editor or coeditor of seven books and was a recipient of the Green ThinkerZ International Distinguished Young Researcher Award in 2020.
Shubham Tayal, PhD, is an assistant professor in the Department of Electronics and Communication Engineering at SR University, Warangal, India. He has more than six years of academic and research experience and has published more than 30 research papers in various scholarly journals and conferences. He is on the editorial and reviewer panel of many journals and conferences, as well. He is the editor or coeditor of seven books and was a recipient of the Green ThinkerZ International Distinguished Young Researcher Award in 2020.
Abhishek Kumar Upadhyay, PhD, is a research and development engineer at X-FAB GmbH Dresden, Germany. After obtaining his PhD in electrical engineering from the Indian Institute of Technology in 2019, he worked for one year as a postdoctoral fellow in the Model Group, Material to System Integration Laboratory, University of Bordeaux, France, and has worked in industry since. He has authored several research articles.
Shiromani Balmukund Rahi, PhD, is a faculty memeber at the Mahamaya College of Agriculture Engineering and Technology, Akabarpur, Uttar Pradesh, India. He has published 25 journal articles, two proceedings, and 18 book chapters, and he has edited seven books for international publications.
Young Suh Song is an assistant professor in the Department of Computer Science at the Korea Military Academy. He has authored or co-authored over 40 research papers in journals and conferences, and he has served as a technical committee member and guest speaker at various universities and conferences.
Back to Top
Table of Contents
Preface
1. Subthreshold Transistors: Concept and Technology
Ball Mukund Mani Tripathi
1.1 Introduction
1.2 Major Sources of Leakage and Possible Methods of Prevention
1.2.1 Leakage Mechanisms in MOS Transistors
1.2.1.1 Current I1
1.2.1.2 Current I2
1.2.1.3 Current I3
1.2.1.4 Current I4
1.2.1.5 Current I5
1.2.1.6 Current I6
1.2.2 Leakage Reduction Techniques
1.2.2.1 Leakage Reduction by Channel Processing
1.2.2.2 Leakage Reduction Through Different Circuit Techniques
1.2.2.3 Scaling of Supply Voltage
1.3 Possibilities and Challenges
1.4 Conclusions
References
2. Introduction to Conventional MOSFET and Advanced Transistor TFET
M. Saravanan, K. Ramkumar, Eswaran Parthasarathy, J. Ajayan and S. Sreejith
2.1 Introduction
2.2 Device Structure
2.3 TFET Principle of Operation
2.3.1 OFF State
2.3.2 ON State
2.4 Material Characterization
2.4.1 Group IV Materials
2.4.2 Group III-V Materials
2.4.3 Heterostructures
2.4.4 2D Materials
2.5 Characteristics of TFET
2.5.1 Subthreshold Swing
2.5.2 ION/IOFF Ratio
2.5.3 Ambipolar Effect
2.6 Comparison of OFF-State Characteristics
2.7 Phonon Scattering’s Impact
2.8 ON-State Performance Comparison
2.9 Performance Analysis Based on Intrinsic Delay
2.10 Bandgap’s Effect on Device Performance
2.11 MOSFET and TFET Scaling Behaviour
2.12 Surface Potential of an N-TFET and N-MOSFET
2.13 Professional Advantages of TFET over MOSFET
2.14 Conclusion
References
3. Operation Principle and Fabrication of TFET
Mekonnen Getnet Yirak and Rishu Chaujar
3.1 Introduction
3.2 Planar MOSFET’s Limitations
3.2.1 Effects of Short Channels
3.3 Demand for Low Power Operation
3.4 TFET: Operation Principle of TFET
3.5 TFET: Recent Design Issues in TFET
3.5.1 TFET: Subthreshold Swing Perspective
3.5.2 TFET: Power Consumption Perspective
3.6 TFET: Modeling and Application
3.6.1 TFET: Modeling
3.6.2 TFET: Application
3.7 TFET: Fabrication Perspective
3.8 TFET: Applications and Future of Low-Power Electronics
3.9 Expected Challenges in Replacing MOSFET with TFET
3.10 Conclusion
References
4. Mathematical Modeling of TFET and Its Future Applications: Ultra Low‑Power SRAM Circuit and III-IV TFET
Nayana G H and P. Vimala
4.1 Introduction
4.2 Modeling Approaches
4.2.1 Atomistic Modeling
4.2.2 Analytical Modeling
4.3 Structure
4.3.1 Effect Transistor
4.3.2 Compact Models
4.4 Applications of Tunnel Field-Effect Transistor
4.4.1 TFET for Biosensor Applications
4.4.2 TFET-Based Memory Devices
4.4.3 TFETs for Mixed Signal Applications
4.4.4 TFETs for Analog/RF Applications
4.4.5 TFETs for Low-Power Applications
4.5 Road Ahead for Tunnel Field Effect Transistors
References
5. Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET
Prabhat Singh and Dharmendra Singh Yadav
5.1 Introduction
5.2 Simulated Device Structure and Parameters
5.3 DC Characteristics
5.4 Analysis of Analog/RF FOMs
5.5 Conclusion
References
6. Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure
Susmitha Kothapalli, Zohmingliana and Brinda Bhowmick
6.1 Introduction
6.2 Study of Different TFET Structures
6.2.1 Simulation Configuration
6.2.2 Comparison of Electrical Parameters of Different Structures of TFET
6.3 Proposed Structure
6.4 Results and Discussion
6.4.1 2-D Model for Surface Potential
6.4.2 Study of Electrical Characteristics
6.4.2.1 Average Subthreshold Swing and ION/IOFF
6.4.2.2 DIBL
6.4.2.3 RDF Effect
6.4.2.4 Temperature Dependence
6.4.2.5 Study of Interface Traps
6.4.3 Memory Window
6.5 Conclusion
6.6 Future Scope
References
7. State of the Art Tunnel FETs for Low Power Memory Applications
Arun A. V., Sreelekshmi P. S. and Jobymol Jacob
7.1 Static Random Access Memory
7.1.1 Working of 6T-SRAM Cell
7.1.1.1 Read Operation
7.1.1.2 Write Operation
7.2 Performance Parameters of SRAM Cell
7.3 TFET-Based SRAM Cell Design
7.3.1 6T SRAM Designs
7.3.2 7T- SRAM Cell Design
7.3.3 8T- SRAM Cell
7.3.4 10 T- SRAM Cell
7.3.5 SRAM Cell Design Based on Negative Differential Resistance Property
7.4 Conclusion
References
8. Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight
Abhishek Acharya, Sourabh Panwar, Shobhit Srivastava and Shashidhara M.
8.1 Fundamental Limitation of CMOS: Tunnel FETs
8.2 Working Principle of Tunnel FET
8.3 Point and Line TFETs: Tunneling Direction
8.4 Perspective of Line TFETs
8.4.1 Planar Line Tunnel FETs
8.4.2 3D Line TFETs
8.5 Analytical Models of Line TFETs
8.6 Line TFETs for Analog & Digital Circuits Design
8.7 Other Steep Slope Devices
8.8 Conclusion
References
9. Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors
Sresta Valasa, Shubham Tayal and Laxman Raju Thoutam
9.1 Introduction
9.2 Device Simulation Details
9.3 Results and Discussion
9.3.1 Comparison of Thermal Characteristics of Conventional (CL) and Junctionless (JL) NSFET
9.3.2 Comparison of Thermal Performance of High-k Gate Dielectrics for CL NSFET and JL NSFET
9.3.3 Comparison of Thermal Performance of Spacer Dielectrics for CL NSFET and JL NSFET
9.4 Conclusion
Acknowledgement
References
10. Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application
Shelja Kaushal
10.1 Introduction
10.2 NCFET and Its Design Constraints
10.2.1 Ferroelectric Materials
10.2.2 NCFET Structure
10.2.3 Capacitance Matching and Ferroelectric Parameters
10.3 NCFET for Low-Power Applications
10.3.1 NCFET for Circuit and System Design
10.3.2 Impact of Process Variations on NCFET
10.3.3 Analytical Models for NCFET
10.4 Summary
References
11. Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
Sourav De, Maximilian Lederer, Yannick Raffel, David Lehninger, Sunanda Thunder, Michael P.M. Jank, Tarek Ali and Thomas Kämpfe
11.1 Introduction
11.2 Ferroelectricity in Hafnium Oxide
11.2.1 Thermodynamic and Kinetic Origin of the Ferroelectric Phase
11.2.2 Microstructure-Based Variability in Ferroelectric Response
11.3 IGZO Based Ferroelectric Thin Film Transistor
11.3.1 Integration and Performance of FeTFT Devices
11.3.2 Characterization of FeTFT-Based Neuromorphic Devices
11.4 Applications in Neural Networks
11.4.1 Monolithic 3D Inference Engine
11.5 Conclusion
References
12. Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges
Y. Alekhya, Umakanta Nanda and Chandan Kumar Pandey
12.1 Introduction
12.2 Literature Survey
12.3 Impact of Radiation Effects on Sram Cells
12.4 Results and Discussion
12.5 Conclusion
Declarations
Data Availability
References
13. Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors
Young Suh Song, Shiromani Balmukund Rahi, Shahnaz Kossar, Abhishek Kumar Upadhyay, Shubham Tayal, Chandan Kumar Pandey and Biswajit Jena
13.1 Introduction
13.2 Challenges in Future Ultra-Low Power Semiconductors
13.3 Conclusion
References
Index
Back to Top
Preface
1. Subthreshold Transistors: Concept and Technology
Ball Mukund Mani Tripathi
1.1 Introduction
1.2 Major Sources of Leakage and Possible Methods of Prevention
1.2.1 Leakage Mechanisms in MOS Transistors
1.2.1.1 Current I1
1.2.1.2 Current I2
1.2.1.3 Current I3
1.2.1.4 Current I4
1.2.1.5 Current I5
1.2.1.6 Current I6
1.2.2 Leakage Reduction Techniques
1.2.2.1 Leakage Reduction by Channel Processing
1.2.2.2 Leakage Reduction Through Different Circuit Techniques
1.2.2.3 Scaling of Supply Voltage
1.3 Possibilities and Challenges
1.4 Conclusions
References
2. Introduction to Conventional MOSFET and Advanced Transistor TFET
M. Saravanan, K. Ramkumar, Eswaran Parthasarathy, J. Ajayan and S. Sreejith
2.1 Introduction
2.2 Device Structure
2.3 TFET Principle of Operation
2.3.1 OFF State
2.3.2 ON State
2.4 Material Characterization
2.4.1 Group IV Materials
2.4.2 Group III-V Materials
2.4.3 Heterostructures
2.4.4 2D Materials
2.5 Characteristics of TFET
2.5.1 Subthreshold Swing
2.5.2 ION/IOFF Ratio
2.5.3 Ambipolar Effect
2.6 Comparison of OFF-State Characteristics
2.7 Phonon Scattering’s Impact
2.8 ON-State Performance Comparison
2.9 Performance Analysis Based on Intrinsic Delay
2.10 Bandgap’s Effect on Device Performance
2.11 MOSFET and TFET Scaling Behaviour
2.12 Surface Potential of an N-TFET and N-MOSFET
2.13 Professional Advantages of TFET over MOSFET
2.14 Conclusion
References
3. Operation Principle and Fabrication of TFET
Mekonnen Getnet Yirak and Rishu Chaujar
3.1 Introduction
3.2 Planar MOSFET’s Limitations
3.2.1 Effects of Short Channels
3.3 Demand for Low Power Operation
3.4 TFET: Operation Principle of TFET
3.5 TFET: Recent Design Issues in TFET
3.5.1 TFET: Subthreshold Swing Perspective
3.5.2 TFET: Power Consumption Perspective
3.6 TFET: Modeling and Application
3.6.1 TFET: Modeling
3.6.2 TFET: Application
3.7 TFET: Fabrication Perspective
3.8 TFET: Applications and Future of Low-Power Electronics
3.9 Expected Challenges in Replacing MOSFET with TFET
3.10 Conclusion
References
4. Mathematical Modeling of TFET and Its Future Applications: Ultra Low‑Power SRAM Circuit and III-IV TFET
Nayana G H and P. Vimala
4.1 Introduction
4.2 Modeling Approaches
4.2.1 Atomistic Modeling
4.2.2 Analytical Modeling
4.3 Structure
4.3.1 Effect Transistor
4.3.2 Compact Models
4.4 Applications of Tunnel Field-Effect Transistor
4.4.1 TFET for Biosensor Applications
4.4.2 TFET-Based Memory Devices
4.4.3 TFETs for Mixed Signal Applications
4.4.4 TFETs for Analog/RF Applications
4.4.5 TFETs for Low-Power Applications
4.5 Road Ahead for Tunnel Field Effect Transistors
References
5. Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET
Prabhat Singh and Dharmendra Singh Yadav
5.1 Introduction
5.2 Simulated Device Structure and Parameters
5.3 DC Characteristics
5.4 Analysis of Analog/RF FOMs
5.5 Conclusion
References
6. Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure
Susmitha Kothapalli, Zohmingliana and Brinda Bhowmick
6.1 Introduction
6.2 Study of Different TFET Structures
6.2.1 Simulation Configuration
6.2.2 Comparison of Electrical Parameters of Different Structures of TFET
6.3 Proposed Structure
6.4 Results and Discussion
6.4.1 2-D Model for Surface Potential
6.4.2 Study of Electrical Characteristics
6.4.2.1 Average Subthreshold Swing and ION/IOFF
6.4.2.2 DIBL
6.4.2.3 RDF Effect
6.4.2.4 Temperature Dependence
6.4.2.5 Study of Interface Traps
6.4.3 Memory Window
6.5 Conclusion
6.6 Future Scope
References
7. State of the Art Tunnel FETs for Low Power Memory Applications
Arun A. V., Sreelekshmi P. S. and Jobymol Jacob
7.1 Static Random Access Memory
7.1.1 Working of 6T-SRAM Cell
7.1.1.1 Read Operation
7.1.1.2 Write Operation
7.2 Performance Parameters of SRAM Cell
7.3 TFET-Based SRAM Cell Design
7.3.1 6T SRAM Designs
7.3.2 7T- SRAM Cell Design
7.3.3 8T- SRAM Cell
7.3.4 10 T- SRAM Cell
7.3.5 SRAM Cell Design Based on Negative Differential Resistance Property
7.4 Conclusion
References
8. Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight
Abhishek Acharya, Sourabh Panwar, Shobhit Srivastava and Shashidhara M.
8.1 Fundamental Limitation of CMOS: Tunnel FETs
8.2 Working Principle of Tunnel FET
8.3 Point and Line TFETs: Tunneling Direction
8.4 Perspective of Line TFETs
8.4.1 Planar Line Tunnel FETs
8.4.2 3D Line TFETs
8.5 Analytical Models of Line TFETs
8.6 Line TFETs for Analog & Digital Circuits Design
8.7 Other Steep Slope Devices
8.8 Conclusion
References
9. Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors
Sresta Valasa, Shubham Tayal and Laxman Raju Thoutam
9.1 Introduction
9.2 Device Simulation Details
9.3 Results and Discussion
9.3.1 Comparison of Thermal Characteristics of Conventional (CL) and Junctionless (JL) NSFET
9.3.2 Comparison of Thermal Performance of High-k Gate Dielectrics for CL NSFET and JL NSFET
9.3.3 Comparison of Thermal Performance of Spacer Dielectrics for CL NSFET and JL NSFET
9.4 Conclusion
Acknowledgement
References
10. Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application
Shelja Kaushal
10.1 Introduction
10.2 NCFET and Its Design Constraints
10.2.1 Ferroelectric Materials
10.2.2 NCFET Structure
10.2.3 Capacitance Matching and Ferroelectric Parameters
10.3 NCFET for Low-Power Applications
10.3.1 NCFET for Circuit and System Design
10.3.2 Impact of Process Variations on NCFET
10.3.3 Analytical Models for NCFET
10.4 Summary
References
11. Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
Sourav De, Maximilian Lederer, Yannick Raffel, David Lehninger, Sunanda Thunder, Michael P.M. Jank, Tarek Ali and Thomas Kämpfe
11.1 Introduction
11.2 Ferroelectricity in Hafnium Oxide
11.2.1 Thermodynamic and Kinetic Origin of the Ferroelectric Phase
11.2.2 Microstructure-Based Variability in Ferroelectric Response
11.3 IGZO Based Ferroelectric Thin Film Transistor
11.3.1 Integration and Performance of FeTFT Devices
11.3.2 Characterization of FeTFT-Based Neuromorphic Devices
11.4 Applications in Neural Networks
11.4.1 Monolithic 3D Inference Engine
11.5 Conclusion
References
12. Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges
Y. Alekhya, Umakanta Nanda and Chandan Kumar Pandey
12.1 Introduction
12.2 Literature Survey
12.3 Impact of Radiation Effects on Sram Cells
12.4 Results and Discussion
12.5 Conclusion
Declarations
Data Availability
References
13. Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors
Young Suh Song, Shiromani Balmukund Rahi, Shahnaz Kossar, Abhishek Kumar Upadhyay, Shubham Tayal, Chandan Kumar Pandey and Biswajit Jena
13.1 Introduction
13.2 Challenges in Future Ultra-Low Power Semiconductors
13.3 Conclusion
References
Index
Back to Top