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Handbook of Cleaning for Semiconductor Manufacturing

Fundamentals and Applications
Edited by Karen Reinhardt and Rick Reidy
Copyright: 2011   |   Status: Published
ISBN: 9780470625958  |  Hardcover  |  1 lb
616 pages | 323 illustrations
Price: $273 USD
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One Line Description
Provides an in-depth discussion of the fundamentals of cleaning and surface conditioning of semiconductor applications.

Audience
The intended audience is any engineer or manager associated with using or supplying cleaning and contamination free technologies for semiconductor manufacturing. Engineers working for semiconductor manufacturing, capital equipment, chemicals, or other industry that assures cleanliness of chemicals, materials, and equipment in the manufacturing area are core constituents as well. In particular, semiconductor manufacturing process engineers, process development engineers, and integration engineers, equipment application and process engineers, and clean chemical process engineers are the target audience.

Description
The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications provides an in-depth discussion of surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet processing is reviewed as well as surface and colloidal aspects of cleaning and etching.
Topics covered in this outstanding new reference include:

Front end of line (FEOL) and back end of line (BEOL) cleaning applications such as high-k/metal gate post-etch cleaning and pre-deposition surface conditioning, copper/low-k post-etch cleaning and pore sealing, high-dose implant stripping and cleaning, and germanium, and silicon passivation;

Formulation development practices, methodology and new directions are presented including chemicals used for preventing corrosion of copper lines, cleaning aluminium lines, reclaiming wafers, and wafer bonding, as well as the filtering and recirculating of chemicals including reuse and recycling;

Wetting, cleaning, and drying of features, such as high aspect ratio features and hydrophilic surface states, especially how to dry without watermarks, the abilities to wet hydrophobic surfaces and to remove liquid from deep features;

The chemical reactions and mechanisms of silicon dioxide etching with hydrofluoric acid, particle removal with ammonium hydroxide/hydrogen peroxide mixture, and metal removal with hydrochloric acid.

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Reviews
"Based on the description, if I were reviewing this work for library collections, my recommendation would be to add this work to any collection that serves a campus with a materials/manufacturing/electrical/computer engineering programs and campuses with departments of physics and/or chemistry with large graduate-level enrollment. Recommended for inclusion in most engineering collections.” Randy Wallace, Dept Head,
Discovery Park Library,University of North Texas








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Author / Editor Details
Karen A. Reinhardt is Principle Consultant at Cameo Consulting in San Jose, California. Currently, Karen works with start-up cleaning companies to develop their technology for acquisition. Prior to forming a consulting company, Karen was employed at Novellus Systems, AMD, and Cypress Semiconductor. She has published more than 30 technical publications, been awarded seven patents, and is co-editor of Handbook of Silicon Wafer Cleaning Technology.

Richard F. Reidy (Ph.D, Penn State) is interim Chair and associate professor of Materials Science and Engineering at the University of North Texas. He has conducted research in interconnect processing and characterization with over 60 technical publications and three patents. He is a member of the International Technology Roadmap for Semiconductors.

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Table of Contents
Foreword.
Introduction.
Part 1: Fundamentals
1. Surface and Colloidal Chemical Aspects of Wet Cleaning

Srini Raghavan, Manish Keswani, and Nandini Venkataraman
1.1 Introduction to Surface Chemical Aspects of Cleaning
1.2 Chemistry of Solid-Water Interface
1.3 Particulate Contamination: Theory and Measurements
1.4 Influence of Surface Electrical Charges on Metal Ion Adsorption
1.5 Wettability of Surfaces
1.6 High Aspect Ratio Cleaning: Narrow Structures
1.7 Surface Tension Gradient: Application to Drying
1.8 Summary
References
2. The Chemistry of Wet Cleaning
D. Martin Knotter
2.1 Introduction to Aqueous Cleaning
2.2 Overview of Aqueous Cleaning Processes
2.3 The SC-1 Clean or APM
2.4 The SC-2 clean or HPM
2.5 Sulfuric Acid-Hydrogen Peroxide Mixture
2.6 Hydrofl uoric Acid
Acknowledgments
References
3. The Chemistry of Wet Etching
D. Martin Knotter
3.1 Introduction and Overview
3.2 Silicon Dioxide Etching
3.3 Silicon Etching
3.4 Silicon Nitride Etching
Acknowledgements
References
4. Surface Phenomena: Rinsing and Drying
Karen A. Reinhardt, Richard F. Reidy, and John A. Marsella
4.1 The Surface Phenomena of Rinsing and Drying
4.2 Overview of Rinsing
4.3.1 The Chemistry and Physics of Watermarks
Acknowledgements
References
5. Fundamental Design of Chemical Formulations
Robert J. Rovito, Michael B. Korzenski, Ping Jiang,
and Karen A. Reinhardt

5.1 Introduction and Overview
5.2 Historical Development of Formulations for the Integrated
Circuit Industry
Residue Removers
5.3 Mechanism of Stripping, Cleaning, and Particle Removal
5.4 Components and Additives in Chemical Formulations
5.5 Creating Chemical Formulations
6 Environmental, Safety, and Health Aspects
Acknowledgments
References 190
6. Filtering, Recirculating, Reuse, and Recycling of Chemicals
Barry Gotlinsky, Kevin T. Pate, and Donald C. Grant
6.1 Overview of Wet Chemical Contamination Control
6.2 Bulk Chemical Distribution for Wet Cleaning Tools
6.3 Chemical Distribution, Filtering, and Recirculation
Requirements for Wet Cleaning Tools
6.4 Contamination Control Metrology
6.5 Effects of Contamination
6.6 Filtration
6.7 Chemical Blending, Recycling, and Reuse
6.8 Summary
References
Part 2: Applications
7. Cleaning Challenges of High-k/Metal Gate Structures

Muhammad M. Hussain, Denis Shamiryan, Vasile Paraschiv,
Kenichi Sano, and Karen A. Reinhardt

7.1 Introduction and Overview of High-k/Metal Gate
Surface Preparation
7.2 Surface Preparation and Cleaning
7.3 Wet Film Removal
7.4 High- ¯Æ’ª ¯‚¬ Removal
7.5 Resist Stripping and Residue Removal
Acknowledgments
References
8. High Dose Implant Stripping
Karen A. Reinhardt and Michael B. Korzenski
8.1 Introduction and Overview of High Dose Implant Stripping
8.2 High Dose Implant Cleaning and Stripping Processes
8.3 Plasma Processing
8.4 Wet Processing
8.5 Other Processing
Acknowledgments
References
9. Aluminum Interconnect Cleaning and Drying
David J. Maloney
9.1 Introduction to Aluminum Interconnect Cleaning
9.2 Source of Post-Etch Residues Requiring Wet Cleaning
9.3 Chemistry Considerations for Cleans Following Etching
9.4 Rinsing/Drying and Equipment Considerations
9.5 Alternative and Emerging Cleaning Technologies
Acknowledgements
References
10. Low-k/Cu Cleaning and Drying
Karen A. Reinhardt, Richard F. Reidy, and Jerome Daviot
10.1 Introduction and Overview
10.2 Stripping and Post-etch Residue Removal
10.3 Pore Sealing and Plasma Damage Repair
10.4 Post-chemical Mechanical Polishing Cleaning
References
11. Corrosion and Passivation of Copper
Darryl W. Peters
11.1 Introduction and Overview
11.2 Copper Corrosion
11.3 Copper Corrosion Inhibitors
11.4 Copper Cleaning Formulations
Acknowledgments
References
12. Germanium Surface Conditioning and Passivation
Sonja Sioncke, Yves J. Chabal, and Martin M. Frank
12.1 Introduction
12.2 Germanium Cleaning
12.3 Surface Passivation and Gate Stack Interface
Preparation
References
13. Wafer Reclaim
Michael B. Korzenski and Ping Jiang
13.1 Introduction to Wafer Reclaim
13.2 Introduction to Silicon Manufacturing
for Semiconductor Applications
13.3 Energy Requirements for Silicon Wafer Manufacturing
13.4 Test Wafer Usage and Wafer Reclaim
13.5 Requirements for Wafer Reclaim and Recycle
13.6 Wafer Reclaim Options
13.7 Types of Wafer Reclaim Processes
13.8 Formulated Reclaim Solutions
Acknowledgements
References
14. Direct Wafer Bonding Surface Conditioning
Hubert Moriceau, Yannick C. Le Tiec, Frank Fournel,
Ludovic F. L. Ecarnot, Sbastien L. E. Kerdil ¨s, Daniel Delprat,
and Christophe Maleville

14.1 Introduction and Overview of Bonding
14.2 Planarization and Smoothing Prior to Bonding
14.3 Wet Cleaning and Surface Conditioning Processing
14.4 Dry Surface Conditioning Processing
14.5 Thermal Treatments and Annealing
14.6 Conductive Bonding
References 537
Part 3: New Directions
15. Novel Analytical Methods for Cleaning Evaluation

Chris M. Sparks and Alain C. Diebold
15.1 Introduction
15.2 Novel Analytical Methods
15.3 Recent Advances in Total Refl ection X-ray Fluorescence
Spectroscopy Analysis
15.4 Advances in Vapor Phase Analysis
15.5 Trace Metal Contamination on the Edge and Bevel of a Wafer
15.6 Kelvin Probe Technologies
15.7 Novel Applications of Electron Spectroscopy Techniques
15.8 Novel X-ray Spectroscopy Techniques
15.9 Electrochemical Sensors
15.10 Summary
Acknowledgments
References
16. Stripping and Cleaning for Advanced Photolithography Applications
John A. Marsella, Dana L. Durham, and Leslie D. Molnar
16.1 Introduction to Advance Stripping Applications
16.2 Historical Background
16.3 Recent Trends for Photoresist Stripping and Post-etch
Residue Removal
16.4 Single Wafer Tools
16.5 Wetting in Small Dimensions and Cleaning Challenges
16.6 Environmental Health and Safety
16.7 The Future of Advanced Photoresist Stripping and Cleaning
Acknowledgements
References
Index

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BISAC SUBJECT HEADINGS
SC1 013050: Science/Chemistry/Physical
TEC 021000: Technology & Engineering/ Matreials Science
TEC 020000: Technology & Engineering /Manufacturing
 
BIC CODES
PNR: Physical Chemistry
TJFD5: Semiconductors
TDCB: Chemical Engineering

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BISAC & BIC Codes
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